Modulations in effective work function of platinum gate electrode in metal-oxide-semiconductor devices
- Citation:
- c Chandra, S.V.J.a, Fortunato Martins Choi E. a R. a. "Modulations in effective work function of platinum gate electrode in metal-oxide-semiconductor devices." Thin Solid Films. 520 (2012): 4556-4558.
Abstract:
Reduction in the accumulation capacitance value was more in Si metal-oxide-semiconductor devices than that of Ge metal-oxide-semiconductor devices after a thermal treatment irrespective of the annealing environment. Relatively, thermal treatment in oxygen environment improves the interface quality of HfO2/Ge stacks considerably, when compared with HfO 2/Si stacks. Whereas, the forming gas annealing at a temperature of 400 °C was not so effective in improving the interface quality at HfO 2/Si stack. The presence of induced negatively charged hydrogen atom in Ge lessens the Fermi level pinning at HfO2 and Ge interface. © 2011 Elsevier B.V. All rights reserved.
Notes:
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