@article {Chandra20124556,
	title = {Modulations in effective work function of platinum gate electrode in metal-oxide-semiconductor devices},
	journal = {Thin Solid Films},
	volume = {520},
	number = {14},
	year = {2012},
	note = {<p>cited By 4</p>
},
	pages = {4556-4558},
	abstract = {<p>Reduction in the accumulation capacitance value was more in Si metal-oxide-semiconductor devices than that of Ge metal-oxide-semiconductor devices after a thermal treatment irrespective of the annealing environment. Relatively, thermal treatment in oxygen environment improves the interface quality of HfO2/Ge stacks considerably, when compared with HfO 2/Si stacks. Whereas, the forming gas annealing at a temperature of 400 {\textdegree}C was not so effective in improving the interface quality at HfO 2/Si stack. The presence of induced negatively charged hydrogen atom in Ge lessens the Fermi level pinning at HfO2 and Ge interface. {\textcopyright} 2011 Elsevier B.V. All rights reserved.</p>
},
	doi = {10.1016/j.tsf.2011.10.137},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84860300789\&partnerID=40\&md5=0298b5fbcdc8009d3c032919bbb87668},
	author = {Chandra, S.V.J.a , Fortunato, E.a , Martins, R.a , Choi, C.-J.b c}
}
