<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Chandra, S.V.J.a , Fortunato, E.a , Martins, R.a , Choi, C.-J.b c</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Modulations in effective work function of platinum gate electrode in metal-oxide-semiconductor devices</style></title><secondary-title><style face="normal" font="default" size="100%">Thin Solid Films</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2012</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-84860300789&amp;partnerID=40&amp;md5=0298b5fbcdc8009d3c032919bbb87668</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">14</style></number><volume><style face="normal" font="default" size="100%">520</style></volume><pages><style face="normal" font="default" size="100%">4556-4558</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Reduction in the accumulation capacitance value was more in Si metal-oxide-semiconductor devices than that of Ge metal-oxide-semiconductor devices after a thermal treatment irrespective of the annealing environment. Relatively, thermal treatment in oxygen environment improves the interface quality of HfO2/Ge stacks considerably, when compared with HfO 2/Si stacks. Whereas, the forming gas annealing at a temperature of 400 °C was not so effective in improving the interface quality at HfO 2/Si stack. The presence of induced negatively charged hydrogen atom in Ge lessens the Fermi level pinning at HfO2 and Ge interface. © 2011 Elsevier B.V. All rights reserved.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 4&lt;/p&gt;
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