Influence of photodegradation on the υτ and microstructure of pin a-Si:H devices
- Citation:
- Vieira, M., Fortunato Carvalho Lavareda Martins E. C. G. "Influence of photodegradation on the υτ and microstructure of pin a-Si:H devices." Vacuum. 45 (1994): 1109-1111.
Abstract:
Pin solar cells of a-Si:H were light soaked. The cell characteristics, the optoelectronic properties and the microstructure parameter, as well as the hydrogen content and density of states of the i-layer, were monitored throughout the entire light-induced degradation process and compared with the corresponding μτ product (for both carriers) inferred through steady photoconductivity and FST measurements. Results suggest a correlation between the decrease of μτ product for electrons and the increase of the fraction of hydrogen bonded on internal surfaces, showing structural changes during the degradation process. © 1994.
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