@article {Vieira19941109,
	title = {Influence of photodegradation on the υτ and microstructure of pin a-Si:H devices},
	journal = {Vacuum},
	volume = {45},
	number = {10-11},
	year = {1994},
	note = {<p>cited By 0</p>
},
	pages = {1109-1111},
	abstract = {<p>Pin solar cells of a-Si:H were light soaked. The cell characteristics, the optoelectronic properties and the microstructure parameter, as well as the hydrogen content and density of states of the i-layer, were monitored throughout the entire light-induced degradation process and compared with the corresponding μτ product (for both carriers) inferred through steady photoconductivity and FST measurements. Results suggest a correlation between the decrease of μτ product for electrons and the increase of the fraction of hydrogen bonded on internal surfaces, showing structural changes during the degradation process. {\textcopyright} 1994.</p>
},
	doi = {10.1016/0042-207X(94)90037-X},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0028516523\&partnerID=40\&md5=5a1957c989300a417d847bb77d88e115},
	author = {Vieira, M., Fortunato, E., Carvalho, C., Lavareda, G., Martins, R.}
}
