<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Vieira, M., Fortunato, E., Carvalho, C., Lavareda, G., Martins, R.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Influence of photodegradation on the υτ and microstructure of pin a-Si:H devices</style></title><secondary-title><style face="normal" font="default" size="100%">Vacuum</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1994</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-0028516523&amp;partnerID=40&amp;md5=5a1957c989300a417d847bb77d88e115</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">10-11</style></number><volume><style face="normal" font="default" size="100%">45</style></volume><pages><style face="normal" font="default" size="100%">1109-1111</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Pin solar cells of a-Si:H were light soaked. The cell characteristics, the optoelectronic properties and the microstructure parameter, as well as the hydrogen content and density of states of the i-layer, were monitored throughout the entire light-induced degradation process and compared with the corresponding μτ product (for both carriers) inferred through steady photoconductivity and FST measurements. Results suggest a correlation between the decrease of μτ product for electrons and the increase of the fraction of hydrogen bonded on internal surfaces, showing structural changes during the degradation process. © 1994.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 0&lt;/p&gt;
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