Improvement of a-Si:H device stability and performances by proper design of the interfaces
- Citation:
- Martins, R., Ferreira Cabrita Fortunato I. A. E. "Improvement of a-Si:H device stability and performances by proper design of the interfaces." Journal of Non-Crystalline Solids. 266-269 B (2000): 1094-1098.
Abstract:
This paper deals with a new design method for the interfaces of a-Si:H pin solar cells that improves the stability and performances of devices deposited in a single batch chamber process. The method consists in removing a deposited sacrificial layer placed between the p/i and/or i/n interfaces by etching. This layer is an absorber of defects and impurities that are introduced in the interfaces, mainly from the chamber walls cross-contamination and the substrate surface. The results achieved increase the device fill factor and short circuit current density, respectively towards 75% and 16.3 mA cm-2, with a final efficiency of about 10%, before light soaking experiments. © 2000 Elsevier Science B.V. All rights reserved.
Notes:
cited By 6
Recent Publications
