<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Martins, R., Ferreira, I., Cabrita, A., Fortunato, E.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Improvement of a-Si:H device stability and performances by proper design of the interfaces</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Non-Crystalline Solids</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2000</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-0007246306&amp;partnerID=40&amp;md5=e7fcbcb5287125fa7f583fd30e4a5f77</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">266-269 B</style></volume><pages><style face="normal" font="default" size="100%">1094-1098</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;This paper deals with a new design method for the interfaces of a-Si:H pin solar cells that improves the stability and performances of devices deposited in a single batch chamber process. The method consists in removing a deposited sacrificial layer placed between the p/i and/or i/n interfaces by etching. This layer is an absorber of defects and impurities that are introduced in the interfaces, mainly from the chamber walls cross-contamination and the substrate surface. The results achieved increase the device fill factor and short circuit current density, respectively towards 75% and 16.3 mA cm-2, with a final efficiency of about 10%, before light soaking experiments. © 2000 Elsevier Science B.V. All rights reserved.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 6&lt;/p&gt;
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