@article {Martins20001094,
	title = {Improvement of a-Si:H device stability and performances by proper design of the interfaces},
	journal = {Journal of Non-Crystalline Solids},
	volume = {266-269 B},
	year = {2000},
	note = {<p>cited By 6</p>
},
	pages = {1094-1098},
	abstract = {<p>This paper deals with a new design method for the interfaces of a-Si:H pin solar cells that improves the stability and performances of devices deposited in a single batch chamber process. The method consists in removing a deposited sacrificial layer placed between the p/i and/or i/n interfaces by etching. This layer is an absorber of defects and impurities that are introduced in the interfaces, mainly from the chamber walls cross-contamination and the substrate surface. The results achieved increase the device fill factor and short circuit current density, respectively towards 75\% and 16.3 mA cm-2, with a final efficiency of about 10\%, before light soaking experiments. {\textcopyright} 2000 Elsevier Science B.V. All rights reserved.</p>
},
	doi = {10.1016/S0022-3093(99)00909-6},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0007246306\&partnerID=40\&md5=e7fcbcb5287125fa7f583fd30e4a5f77},
	author = {Martins, R., Ferreira, I., Cabrita, A., Fortunato, E.}
}
