@conference {Lavareda199659,
	title = {Improved a-Si:H TFT performance using a-Six-Ni1-x/a-SixC1-x stack dielectrics},
	booktitle = {Materials Research Society Symposium - Proceedings},
	volume = {424},
	year = {1996},
	note = {<p>cited By 1</p>
},
	pages = {59-64},
	abstract = {<p>In this paper we present a study on the electrical characteristics (conductivity, σ and relative dielectric constant, εr) of amorphous silicon nitride (a-SixN1-x) and carbide (a-SixC1-x) films deposited by PECVD, used as dielectric materials in TFT devices, aiming to select the most adequate alloy that lead to improve device performances. Besides that, double stack a-SixN1-x/a-SixC1-x structures were developed and applied as dielectric layers on TFTs, whose performances show to be superior to those ones using single silicon nitride or silicon carbide as dielectric.</p>
},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0030399823\&partnerID=40\&md5=4e4eecf30f5c81dd94a29596a1017d06},
	author = {Lavareda, G., Fortunato, E., Carvalho, C.Nunes, Martins, R.}
}
