<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>47</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Lavareda, G., Fortunato, E., Carvalho, C.Nunes, Martins, R.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Improved a-Si:H TFT performance using a-Six-Ni1-x/a-SixC1-x stack dielectrics</style></title><secondary-title><style face="normal" font="default" size="100%">Materials Research Society Symposium - Proceedings</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1996</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-0030399823&amp;partnerID=40&amp;md5=4e4eecf30f5c81dd94a29596a1017d06</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">424</style></volume><pages><style face="normal" font="default" size="100%">59-64</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;In this paper we present a study on the electrical characteristics (conductivity, σ and relative dielectric constant, εr) of amorphous silicon nitride (a-SixN1-x) and carbide (a-SixC1-x) films deposited by PECVD, used as dielectric materials in TFT devices, aiming to select the most adequate alloy that lead to improve device performances. Besides that, double stack a-SixN1-x/a-SixC1-x structures were developed and applied as dielectric layers on TFTs, whose performances show to be superior to those ones using single silicon nitride or silicon carbide as dielectric.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 1&lt;/p&gt;
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