Fully transparent ZnO thin-film transistor produced at room temperature
- Citation:
- Fortunato, E.M.C., Barquinha Pimentel Gonçalves Marques Pereira Martins P. M. C. A. "Fully transparent ZnO thin-film transistor produced at room temperature." Advanced Materials. 17 (2005): 590-594.
Abstract:
The possibility of fabricating high-mobility ZnO thin-film transistors (ZnO-TFT) at room temperature by rf magnetron sputtering was discussed. It was found that the films were nanocrystalline with a hexagonal structure and exhibited a preferred orientation with the c-axis perpendicular to the substrate. The undoped ZnO films exhibited improved crystallinity fraction of the nanocrystals and low oxygen vacancies. Analysis shows that the exposure of the ZnO-TFTs to the ambient light has no effect on the current voltage characteristics.
Notes:
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