<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Fortunato, E.M.C., Barquinha, P.M.C., Pimentel, A.C.M.B.G., Gonçalves, A.M.F., Marques, A.J.S., Pereira, L.M.N., Martins, R.F.P.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Fully transparent ZnO thin-film transistor produced at room temperature</style></title><secondary-title><style face="normal" font="default" size="100%">Advanced Materials</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2005</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-16244382410&amp;partnerID=40&amp;md5=4c5788447641ea95cbf1cc7a32b9f75f</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">5</style></number><volume><style face="normal" font="default" size="100%">17</style></volume><pages><style face="normal" font="default" size="100%">590-594</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;The possibility of fabricating high-mobility ZnO thin-film transistors (ZnO-TFT) at room temperature by rf magnetron sputtering was discussed. It was found that the films were nanocrystalline with a hexagonal structure and exhibited a preferred orientation with the c-axis perpendicular to the substrate. The undoped ZnO films exhibited improved crystallinity fraction of the nanocrystals and low oxygen vacancies. Analysis shows that the exposure of the ZnO-TFTs to the ambient light has no effect on the current voltage characteristics.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 677&lt;/p&gt;
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