@article {Fortunato2005590,
	title = {Fully transparent ZnO thin-film transistor produced at room temperature},
	journal = {Advanced Materials},
	volume = {17},
	number = {5},
	year = {2005},
	note = {<p>cited By 677</p>
},
	pages = {590-594},
	abstract = {<p>The possibility of fabricating high-mobility ZnO thin-film transistors (ZnO-TFT) at room temperature by rf magnetron sputtering was discussed. It was found that the films were nanocrystalline with a hexagonal structure and exhibited a preferred orientation with the c-axis perpendicular to the substrate. The undoped ZnO films exhibited improved crystallinity fraction of the nanocrystals and low oxygen vacancies. Analysis shows that the exposure of the ZnO-TFTs to the ambient light has no effect on the current voltage characteristics.</p>
},
	doi = {10.1002/adma.200400368},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-16244382410\&partnerID=40\&md5=4c5788447641ea95cbf1cc7a32b9f75f},
	author = {Fortunato, E.M.C., Barquinha, P.M.C., Pimentel, A.C.M.B.G., Gon{\c c}alves, A.M.F., Marques, A.J.S., Pereira, L.M.N., Martins, R.F.P.}
}
