Examination of 1-D position sensitive detector performance through analysis of front contact heterojunction
- Citation:
- Topic, M., Smole Furlan Fortunato Martins F. J. E. "Examination of 1-D position sensitive detector performance through analysis of front contact heterojunction." Materials Research Society Symposium - Proceedings. Vol. 420. 1996. 171-176.
Abstract:
The influence of different TCOs (SnO2 and ITO) on the photoelectrical properties of 1-D position sensitive detectors based on p-i-n structures was studied. A strong cross-contamination in the p-layer and contamination in the i-layer reduce the quality of the device. Numerical analysis of TCO/p-i-n structure also revealed a strong increase in defect states at the p-layer surface which can be attributed to the reduction of TCO. ITO seems to be less appropriate for a front TCO, although the spectral response of the p-i-n structure under reverse bias is not significantly affected by the conditions at the TCO/p heterojunction.
Notes:
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