<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>47</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Topic, M., Smole, F., Furlan, J., Fortunato, E., Martins, R.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Examination of 1-D position sensitive detector performance through analysis of front contact heterojunction</style></title><secondary-title><style face="normal" font="default" size="100%">Materials Research Society Symposium - Proceedings</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1996</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-0030407615&amp;partnerID=40&amp;md5=f5bf3e782d665b0f96430226a7b25ae4</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">420</style></volume><pages><style face="normal" font="default" size="100%">171-176</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;The influence of different TCOs (SnO2 and ITO) on the photoelectrical properties of 1-D position sensitive detectors based on p-i-n structures was studied. A strong cross-contamination in the p-layer and contamination in the i-layer reduce the quality of the device. Numerical analysis of TCO/p-i-n structure also revealed a strong increase in defect states at the p-layer surface which can be attributed to the reduction of TCO. ITO seems to be less appropriate for a front TCO, although the spectral response of the p-i-n structure under reverse bias is not significantly affected by the conditions at the TCO/p heterojunction.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 1&lt;/p&gt;
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