@conference {Topic1996171,
	title = {Examination of 1-D position sensitive detector performance through analysis of front contact heterojunction},
	booktitle = {Materials Research Society Symposium - Proceedings},
	volume = {420},
	year = {1996},
	note = {<p>cited By 1</p>
},
	pages = {171-176},
	abstract = {<p>The influence of different TCOs (SnO2 and ITO) on the photoelectrical properties of 1-D position sensitive detectors based on p-i-n structures was studied. A strong cross-contamination in the p-layer and contamination in the i-layer reduce the quality of the device. Numerical analysis of TCO/p-i-n structure also revealed a strong increase in defect states at the p-layer surface which can be attributed to the reduction of TCO. ITO seems to be less appropriate for a front TCO, although the spectral response of the p-i-n structure under reverse bias is not significantly affected by the conditions at the TCO/p heterojunction.</p>
},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-0030407615\&partnerID=40\&md5=f5bf3e782d665b0f96430226a7b25ae4},
	author = {Topic, M., Smole, F., Furlan, J., Fortunato, E., Martins, R.}
}
