Doped and undoped a-Si:H and a-SiC:H films were deposited by R. F. decomposition of silane and silane/methane mixtures respectively, in a two consecutive (decomposition and deposition) chambers glow discharge capacitively coupled system. Their electro-optical properties were extensively investigated through dark conductivity, photoconductivity, spectral response, optical absorption, R. F. transmission spectra, electron spin ressonance and CxV MOS measurements.
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