<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>47</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Pereyra, I., Andrade, A.M., Sanematsu, M.S., Martins, R.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">ELECTRO-OPTICAL CHARACTERIZATION OF AMORPHOUS SILICON FILMS DEPOSITED IN A TWO CONSECUTIVE DECOMPOSITION AND DEPOSITION CHAMBERS SYSTEM.</style></title><secondary-title><style face="normal" font="default" size="100%">Commission of the European Communities, (Report) EUR</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1985</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-0022176794&amp;partnerID=40&amp;md5=ca20fbf9855ee0ac6978efeb951b8791</style></url></web-urls></urls><pages><style face="normal" font="default" size="100%">717-721</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Doped and undoped a-Si:H and a-SiC:H films were deposited by R. F. decomposition of silane and silane/methane mixtures respectively, in a two consecutive (decomposition and deposition) chambers glow discharge capacitively coupled system. Their electro-optical properties were extensively investigated through dark conductivity, photoconductivity, spectral response, optical absorption, R. F. transmission spectra, electron spin ressonance and CxV MOS measurements.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 0&lt;/p&gt;
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