@article {Martins20114491,
	title = {Complementary metal oxide semiconductor technology with and on paper},
	journal = {Advanced Materials},
	volume = {23},
	number = {39},
	year = {2011},
	note = {<p>cited By 88</p>
},
	pages = {4491-4496},
	abstract = {<p>A complementary metal oxide semiconductor (CMOS) device is described. The device is based on n-(In-Ga-Zn-O) and p-type (SnO x) active oxide semiconductors and uses a transparent conductive oxide (In-Zn-O) as gate electrode that sits on a flexible, recyclable paper substrate that is simultaneously the substrate and the dielectric. Copyright {\textcopyright} 2011 WILEY-VCH Verlag GmbH \&amp; Co. KGaA, Weinheim.</p>
},
	doi = {10.1002/adma.201102232},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-80054705024\&partnerID=40\&md5=5b2248dc71c281b7ecff03b39f6209fb},
	author = {Martins, R.a , Nathan, A.b , Barros, R.a , Pereira, L.a , Barquinha, P.a , Correia, N.a , Costa, R.a , Ahnood, A.b , Ferreira, I}
}
