<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Martins, R.a , Nathan, A.b , Barros, R.a , Pereira, L.a , Barquinha, P.a , Correia, N.a , Costa, R.a , Ahnood, A.b , Ferreira, I</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Complementary metal oxide semiconductor technology with and on paper</style></title><secondary-title><style face="normal" font="default" size="100%">Advanced Materials</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2011</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-80054705024&amp;partnerID=40&amp;md5=5b2248dc71c281b7ecff03b39f6209fb</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">39</style></number><volume><style face="normal" font="default" size="100%">23</style></volume><pages><style face="normal" font="default" size="100%">4491-4496</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;A complementary metal oxide semiconductor (CMOS) device is described. The device is based on n-(In-Ga-Zn-O) and p-type (SnO x) active oxide semiconductors and uses a transparent conductive oxide (In-Zn-O) as gate electrode that sits on a flexible, recyclable paper substrate that is simultaneously the substrate and the dielectric. Copyright © 2011 WILEY-VCH Verlag GmbH &amp;amp; Co. KGaA, Weinheim.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 88&lt;/p&gt;
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