Rodrigo Martins

Citation:

Zhang, S., Pereira Hu Ranieiro Fortonato Ferreira Martins L. Z. L. "Characterization of nanocrystalline silicon carbide films." Journal of Non-Crystalline Solids. 352 (2006): 1410-1415.

Abstract:

Amorphous silicon carbide films were obtained by plasma enhanced chemical vapor deposition (PECVD) technique using a gas mixture of silane, methane, and hydrogen with a high excitation frequency and a high hydrogen dilution ratio. The high temperature annealing behavior of the amorphous silicon carbide films was studied by annealing at 1373 K for 1 h in nitrogen atmosphere. A very thin Au film was deposited on part of the films to investigate the metal induced crystallization effect. Well aligned nanotubes were found on the silicon carbide films covered by a thin gold layer after the high temperature annealing by atomic force microscopy. Further study is necessary to identify the nature of the nanotubes and elucidate their growth mechanism. © 2006 Elsevier B.V. All rights reserved.

Notes:

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