@article {Zhang20061410,
	title = {Characterization of nanocrystalline silicon carbide films},
	journal = {Journal of Non-Crystalline Solids},
	volume = {352},
	number = {9-20 SPEC. ISS.},
	year = {2006},
	note = {<p>cited By 6</p>
},
	pages = {1410-1415},
	abstract = {<p>Amorphous silicon carbide films were obtained by plasma enhanced chemical vapor deposition (PECVD) technique using a gas mixture of silane, methane, and hydrogen with a high excitation frequency and a high hydrogen dilution ratio. The high temperature annealing behavior of the amorphous silicon carbide films was studied by annealing at 1373 K for 1 h in nitrogen atmosphere. A very thin Au film was deposited on part of the films to investigate the metal induced crystallization effect. Well aligned nanotubes were found on the silicon carbide films covered by a thin gold layer after the high temperature annealing by atomic force microscopy. Further study is necessary to identify the nature of the nanotubes and elucidate their growth mechanism. {\textcopyright} 2006 Elsevier B.V. All rights reserved.</p>
},
	doi = {10.1016/j.jnoncrysol.2006.02.027},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-33745463684\&partnerID=40\&md5=e1f0a811abe20030388883e6261bf111},
	author = {Zhang, S., Pereira, L., Hu, Z., Ranieiro, L., Fortonato, E., Ferreira, I., Martins, R.}
}
