<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Zhang, S., Pereira, L., Hu, Z., Ranieiro, L., Fortonato, E., Ferreira, I., Martins, R.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Characterization of nanocrystalline silicon carbide films</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Non-Crystalline Solids</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2006</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-33745463684&amp;partnerID=40&amp;md5=e1f0a811abe20030388883e6261bf111</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">9-20 SPEC. ISS.</style></number><volume><style face="normal" font="default" size="100%">352</style></volume><pages><style face="normal" font="default" size="100%">1410-1415</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Amorphous silicon carbide films were obtained by plasma enhanced chemical vapor deposition (PECVD) technique using a gas mixture of silane, methane, and hydrogen with a high excitation frequency and a high hydrogen dilution ratio. The high temperature annealing behavior of the amorphous silicon carbide films was studied by annealing at 1373 K for 1 h in nitrogen atmosphere. A very thin Au film was deposited on part of the films to investigate the metal induced crystallization effect. Well aligned nanotubes were found on the silicon carbide films covered by a thin gold layer after the high temperature annealing by atomic force microscopy. Further study is necessary to identify the nature of the nanotubes and elucidate their growth mechanism. © 2006 Elsevier B.V. All rights reserved.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 6&lt;/p&gt;
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