Rodrigo Martins

Citation:

Topič, M.a, Smole Furlan Fortunato Martins F. a J. a. "Analysis of front contact heterojunction in a-Si:H one-dimensional position sensitive detectors." Review of Scientific Instruments. 68 (1997): 1377-1381.

Abstract:

The influence of different transparent conducting oxides (TCO) on the transverse photoelectrical properties of one-dimensional position sensitive detectors based on p-i-n amorphous silicon structures was studied. For both SnO 2 and indium tin oxide, poor quality of the p layer was revealed by secondary ion mass spectroscopy measurements. Good agreement between experimental and simulation characteristics of TCO/p-i-n structure was additionally conditioned by a strong increase in defect states at the p layer surface which can be attributed to the reduction/ oxidation process at the TCO/p interface. However, the analysis showed that under reverse bias the spectral response of the p-i-n structure is not significantly affected by different TCO layers and conditions at the TCO/p heterojunction. Nevertheless, indium tin oxide is less appropriate for a front TCO layer due to the poor reverse dark current-voltage characteristic, i.e., higher leakage current component leading to lower signal to noise ratio. © 1997 American Institute of Physics.

Notes:

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