<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Topič, M.a , Smole, F.a , Furlan, J.a , Fortunato, E.b , Martins, R.b</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Analysis of front contact heterojunction in a-Si:H one-dimensional position sensitive detectors</style></title><secondary-title><style face="normal" font="default" size="100%">Review of Scientific Instruments</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">1997</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.scopus.com/inward/record.uri?eid=2-s2.0-4043100666&amp;partnerID=40&amp;md5=58c871dfe426c00db5785847a7176df1</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">3</style></number><volume><style face="normal" font="default" size="100%">68</style></volume><pages><style face="normal" font="default" size="100%">1377-1381</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;The influence of different transparent conducting oxides (TCO) on the transverse photoelectrical properties of one-dimensional position sensitive detectors based on p-i-n amorphous silicon structures was studied. For both SnO 2 and indium tin oxide, poor quality of the p layer was revealed by secondary ion mass spectroscopy measurements. Good agreement between experimental and simulation characteristics of TCO/p-i-n structure was additionally conditioned by a strong increase in defect states at the p layer surface which can be attributed to the reduction/ oxidation process at the TCO/p interface. However, the analysis showed that under reverse bias the spectral response of the p-i-n structure is not significantly affected by different TCO layers and conditions at the TCO/p heterojunction. Nevertheless, indium tin oxide is less appropriate for a front TCO layer due to the poor reverse dark current-voltage characteristic, i.e., higher leakage current component leading to lower signal to noise ratio. © 1997 American Institute of Physics.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">&lt;p&gt;cited By 1&lt;/p&gt;
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