@article {Topi{\v c}19971377,
	title = {Analysis of front contact heterojunction in a-Si:H one-dimensional position sensitive detectors},
	journal = {Review of Scientific Instruments},
	volume = {68},
	number = {3},
	year = {1997},
	note = {<p>cited By 1</p>
},
	pages = {1377-1381},
	abstract = {<p>The influence of different transparent conducting oxides (TCO) on the transverse photoelectrical properties of one-dimensional position sensitive detectors based on p-i-n amorphous silicon structures was studied. For both SnO 2 and indium tin oxide, poor quality of the p layer was revealed by secondary ion mass spectroscopy measurements. Good agreement between experimental and simulation characteristics of TCO/p-i-n structure was additionally conditioned by a strong increase in defect states at the p layer surface which can be attributed to the reduction/ oxidation process at the TCO/p interface. However, the analysis showed that under reverse bias the spectral response of the p-i-n structure is not significantly affected by different TCO layers and conditions at the TCO/p heterojunction. Nevertheless, indium tin oxide is less appropriate for a front TCO layer due to the poor reverse dark current-voltage characteristic, i.e., higher leakage current component leading to lower signal to noise ratio. {\textcopyright} 1997 American Institute of Physics.</p>
},
	url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-4043100666\&partnerID=40\&md5=58c871dfe426c00db5785847a7176df1},
	author = {Topi{\v c}, M.a , Smole, F.a , Furlan, J.a , Fortunato, E.b , Martins, R.b}
}
