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The electrical methods used to study the molecular movements are based on the movement of the dipoles under DC or AC electric field. We have proposed recently a combined measuring protocol to analyze charge injection/extraction, transport, trapping and de-trapping in polar or non-polar dielectric materials. The method is used here to analyze the molecular movements in polyimide in the temperature range from 293 to 572 K. A strong relaxation was observed around 402 K and a very weak relaxation around 345 K. This is the beta relaxation which is quite complex. As concern the behavior at high temperatures, above the beta relaxation, a high peak was observed that shifts continuously to higher temperatures as the charging temperature and/or the charging field increase. The maximum current of the peak increases and the temperature corresponding to the maximum current increases as the charging temperature and/or the charging field increase, given a direct observation of the so called cross-over effect related to current decay for sample charged at high fields and/or high temperatures.

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Supply chain management ({SCM)} is crucial for increasing organisational effectiveness, enhancing competitiveness, customer service and profitability. Actually, the lean and green philosophies have been adopted in the {SCM} context, but nearly always separately and with little understanding of their influence on supply chain performance. Accordingly, this paper intends to propose a conceptual model that explores the relationships between lean and green practices and supply chain performance. A set of lean and green {SCM} practices and a performance measurement system are suggested. The proposed performance measures intend to evaluate the practices influence on operational, economic and environmental supply chain's performance.

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Copper oxide (Cu2 O) thin films were used to produce bottom gate p-type transparent thin-film transistors (TFTs). Cu2 O was deposited by reactive rf magnetron sputtering at room temperature and the films exhibit a polycrystalline structure with a strongest orientation along (111) plane. The TFTs exhibit improved electrical performance such as a field-effect mobility of 3.9 cm2 /V s and an on/off ratio of 2× 102. © 2010 American Institute of Physics.

P-type thin-film transistors (TFTs) using room temperature sputtered SnOx (x<2) as a transparent oxide semiconductor have been produced. The SnOx films show p-type conduction presenting a polycrystalline structure composed with a mixture of tetragonal Β-Sn and α -SnOx phases, after annealing at 200 °C. These films exhibit a hole carrier concentration in the range of ≈ 1016 - 1018 cm-3; electrical resistivity between 101 - 102 cm; Hall mobility around 4.8 cm2 /V s; optical band gap of 2.8 eV; and average transmittance ≈85% (400 to 2000 nm). The bottom gate p-type SnOx TFTs present a field-effect mobility above 1 cm2 /V s and an ON/OFF modulation ratio of 103. © 2010 American Institute of Physics.

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Analysis of x-ray spectra emitted by highly charged ions in an electron-cyclotron-resonance ion source (ECRIS) may be used as a tool to estimate the charge-state distribution (CSD) in the source plasma. For that purpose, knowledge of the electron energy distribution in the plasma, as well as the most important processes leading to the creation and de-excitation of ionic excited states are needed. In this work we present a method to estimate the ion CSD in an ECRIS through the analysis of the x-ray spectra emitted by the plasma. The method is applied to the analysis of a sulfur ECRIS plasma.

Analysis of x-ray spectra emitted by highly charged ions in an electron-cyclotron-resonance ion source (ECRIS) may be used as a tool to estimate the charge-state distribution (CSD) in the source plasma. For that purpose, knowledge of the electron energy distribution in the plasma, as well as the most important processes leading to the creation and de-excitation of ionic excited states are needed. In this work we present a method to estimate the ion CSD in an ECRIS through the analysis of the x-ray spectra emitted by the plasma. The method is applied to the analysis of a sulfur ECRIS plasma.

The effects of zinc concentration on the performance of solution processed amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) have been investigated using high-k aluminum titanium oxide as gate dielectric. The x-ray diffraction results confirmed that all the IGZO channel layers are amorphous. The performance of a-IGZO TFTs were investigated in the linear regime operation. Highest linear field-effect mobility of 5.8 cm2 /V s with an Ion / Ioff ratio of 6× 107 and subthreshold swing of 0.28 V/dec were obtained for the a-IGZO (311) TFTs. The obtained performance of the a-IGZO TFTs is very promising for low-voltage display applications. © 2010 American Institute of Physics.

Zinc oxide (ZnO) has attracted recent interest for a range of applications, including use as a transparent conductive oxide (TCO) and in gas sensor devices. This paper compares ZnO films grown using two methods designed for the production of thin films, namely sol-gel and aerosol assisted chemical vapour deposition (AACVD) for potential use in sensor and TCO applications. Materials produced by the sol-gel route were observed to be amorphous when annealed at 350 °C, but were crystalline when annealed at higher temperatures and had a relatively open grain structure when compared to the AACVD films. Electrical characterization showed that materials were highly resistive, but that their properties varied considerably when the measurements were performed in vacuum or in air. This behaviour was rapidly reversible and reproducible for room temperature measurement. In contrast materials grown by aerosol-assisted CVD were non-porous, polycrystalline and conductive. Measured electrical properties did not vary with changing measurement atmosphere. These differences are discussed in terms of the structural characterisation of the films and some comments are made regarding the suitability of both approaches for the growth of ZnO thin film sensor materials. © 2009 Elsevier B.V. All rights reserved.

Rutile titanium dioxide TiO2 is used in a number of technological areas. Therefore, in surface science, it has become the most studied oxide surface. Water adsorption on rutile TiO2 (110) has been investigated using the X-ray photoelectron spectroscopy (XPS) and the work function study (WF): water adsorption induces formation of a dipole layer, which locally changes the work function. This can be experimentally observed as the onset shift of the secondary electron energy spectrum. While XPS seems to be insufficiently sensitive to monitor water adsorption on TiO2, there is a clear work function change undoubtedly attributed to the water adsorption. The measurements were done for different water vapour pressures, exposure times, sample temperatures and general surface conditions. Time evolutions of the work function change and the H2O partial pressure, enable us to successfully model the adsorption dynamics and help us understand the observed results. The analysis clearly shows existence of at least three different adsorption sites. Their interplay governs the work function time evolution, while the relative contributions depend on the surface temperature and, presumably, its topography. These results will be discussed in the light of several recent experimental and theoretical studies of this system done by other authors.

In this work the depth of interfaces in multilayered structures was estimated. The fractions of positron annihilation as function of the implantation energy were estimated from an S-W plot and then converted into a function of the sample depth through the positron implantation profile in the multilayer system computed from a reduced positron profile. The results of this method in Ti/Al samples are comparable to those using the common analysis based on positron diffusion equations. The positron analyses results were compared with SIMS profiles for the same samples.

We present some selected results indicating the feasibility of preparing therapeutic finished ophthalmic articles, namely commercially available soft contact lenses, using a supercritical solvent impregnation (SSI) technique. Several commercial soft contact lenses were tested and, among these, four lenses were selected for more complete studies: Nelfilcon A (FocusDailies®, CIBA Vision), Omafilcon A (Proclear® Compatibles, CooperVision), Methafilcon A (Frequency® 55, CooperVision) and Hilafilcon B (SofLens® 59 Comfort, Bausch {&} Lomb). Supercritical carbon dioxide (scCO2) was the chosen supercritical fluid and two ophthalmic drugs were tested: flurbiprofen (a NSAID, hydrophobic) and timolol maleate (an anti-glaucoma drug, hydrophilic). The effects of operational pressure, of impregnation duration and of the addition of a cosolvent (ethanol) were studied on the overall drug loading yields. Depending on the experiment, we employed pressures from 9 up to 16 MPa and impregnation times from 30 up to 180 min. Temperature was kept constant and equal to 313 K. The employed depressurization rates were kept low and between 0.1 and 0.2 MPa/min. Results are discussed in terms of the employed operational conditions and taking in consideration all the possible interactions between supercritical fluids, drugs, cosolvents and the polymers which compose the employed hydrogel contact lenses. In vitro drug release experiments were carried out in order to evaluate the resulting drug release profiles. Obtained results were also compared with drug-loaded contact lenses obtained by conventional drug "soaking" in aqueous solutions. Results also proved that SSI can be considered as a viable, efficient and safe alternative for the impregnation of drugs, including those of hydrophobic character or presenting low aqueous solubility, into commercial soft contact lenses. SSI proved to be a "tunable" process since the variation of the employed operational conditions indicated that it is possible to control the amount of impregnated drug. In the end, the ophthalmic articles were recovered undamaged and without the presence of harmful solvent residues. This method also permits to process already prepared commercial contact lenses, without interfering with their manufacture methods and, after processing, store them for future use. © 2010 Elsevier B.V. All rights reserved.

RF-PECVD was used to prepare amorphous of carbon (DLC) onto stainless steel 316 and glass substrates. The substrates were negatively biased at between 100 V to 400 V. Thin films of DLC have been deposited using C2H2 and titanium isopropoxide (TIPOT). Argon was used to generate the plasma in the PECVD system chamber. DEKTAK 8 surface stylus profilometer was used to measure the film thickness and the deposition rate was calculated. Micro Raman spectroscopy was employed to determine the chemical structure and bonding present in the films. Composition analysis of the samples was carried out using VGTOF SIMS (IX23LS) instrument. In addition, X-ray photoelectron spectroscopy (XPS) was used to analyze the composition and chemical state of the films. The wettability of the films was examined using the optical contact angle meter (CAM200) system. Two types of liquids with different polarities were used to study changes in the surface energy. The as-grown films were in the thickness range of 200-400 nm. Raman spectroscopy results showed that the I(D)/I(G) ratio decreased when the bias voltage on the stainless steel substrates was increased. This indicates an increase in the graphitic nature of the film deposited. In contrast, on the glass substrates the I(D)/I(G) ratio increased when the bias voltage was increased indicates a greater degree of diamond like character. Chemical composition determined using XPS showed the presence of carbon and oxygen in both samples on glass and stainless steel substrates. Both coatings the contact angle of the films decreased except for 400 V which showed a slight increase. The oxygen is thought to play an important role on the polar component of a-C.

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