Thin-film transistors based on p-type Cu2 O thin films produced at room temperature
- Citation:
- b Fortunato, E.a, Figueiredo Barquinha Elamurugu Barros Goņalves Park Hwang Martins V. a P. a. "Thin-film transistors based on p-type Cu2 O thin films produced at room temperature." Applied Physics Letters. 96 (2010).
Abstract:
Copper oxide (Cu2 O) thin films were used to produce bottom gate p-type transparent thin-film transistors (TFTs). Cu2 O was deposited by reactive rf magnetron sputtering at room temperature and the films exhibit a polycrystalline structure with a strongest orientation along (111) plane. The TFTs exhibit improved electrical performance such as a field-effect mobility of 3.9 cm2 /V s and an on/off ratio of 2× 102. © 2010 American Institute of Physics.
Notes:
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