For the characterization of the new materials and for a better understanding of the connection between structure and properties it is necessary to use more and more sensible methods to study molecular movement at nanometric scale. This paper presents the experimental basis for a new electrical method to study the fine molecular movements at nanometric scale in dielectric materials. The method will be applied for polar and non-polar materials characterization. Traditionally, the electrical methods used to study the molecular movements are based on the movements of the dipoles that are parts of the molecules. We have proposed recently a combined protocol to analyze charge injection/extraction, transport, trapping and detrapping in low mobility materials. The experimental results demonstrate that the method can be used to obtain a complex thermogram which contains information about all molecular movements, even at nanoscopic level. Actually during the charging process we are decorating the structure with space charge and during the subsequent heating we are observing an apparent peak and the genuine peaks that are related to charge de-trapping determined by the molecular movement. The method is very sensitive, very selective and allows to determinate the parameters for local and collective molecular movements, including the temperature dependence of the activation energy and the relaxation time.

Reported herein is a nonvolatile n-type floating gate memory paper field-effect transistor, emphasizing the role of the paper structure and properties on the device performance recorded such as in the high capacitance per unit area at low frequencies (>2.5 μFcm-2) and so on the set of high charge retention times achieved (>16000 hours). The device was built via the hybrid integration of natural cellulose fibers, which act simultaneously as substrate and gate dielectric, using amorphous indium zinc and gallium indium zinc oxides respectively for the gate electrode and channel layer. This was complemented by the use of continuous patterned metal layers as source/drain electrodes. © 2010 Copyright SPIE - The International Society for Optical Engineering.