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In this work the depth of interfaces in multilayered structures was estimated. The fractions of positron annihilation as function of the implantation energy were estimated from an S-W plot and then converted into a function of the sample depth through the positron implantation profile in the multilayer system computed from a reduced positron profile. The results of this method in Ti/Al samples are comparable to those using the common analysis based on positron diffusion equations. The positron analyses results were compared with SIMS profiles for the same samples.
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