The post-graduation in the field of Technology Assessment (TA) is recent and that are several and different ways to be organised. Most experiences are related with the Masters diplom level (2nd cycle of graduation in high education). Just one in PhD level is explicit in the field of TA, and some other PhD courses include also TA topics in their programme structure. In this chapter we will analyse the problems related with the design of a post-graduation (MA, MSc or PhD) programme in the field of TA using as reference some international experiences. Hereby, the main conclusion seems to address labour market needs in the specialised knowledge of TA, of technology management or technology innovation. In this sense TA should be included as “minor” into post-graduation courses which may range from engineering disciplines to social sciences. As a graduation programme it can fill an expertise gap between technicians,engineers, scientists and the strategic decision makers or policy makers.

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This paper addresses the automatic generation of RF integrated inductors model. In this work the double p-model is used as a way of characterizing the inductor behaviour over a frequency range beyond the self-resonant value. For the evaluation of the model element values analytical expressions based on technology parameters as well as on the device geometric characteristics are used. The use of a technology-based methodology for the evaluation of the model parameters grants the adaptability of the models generated to any technology. The inductor analytical characterization is integrated into an optimization-based tool for the automatic design of RF integrated inductors. This tool uses a Genetic Algorithm (GA) optimization procedure, where user defined constraints on the design parameters are taken into account. Due to the design constraints nature and topology constraints, discrete variables optimization techniques are used.

New compounds of the general formulas [M(Ar-BIAN)(2)]BF(4) and [M(Ar-BIAN)(NCMe)(2)]BF(4), where M=Cu(1) or Ag(1) and Ar-BIAN = bis(aryl)acenaphthenequinonediimine, were synthesized by the direct reaction of [Cu(NCMe)(4)]BF(4) or [Ag(NCMe)(4)]BF(4) with the corresponding Ar-BIAN ligand in dried CH(2)Cl(2). The synthesized compounds are [M(o, d, p-Me(3)C(6)H(2)-BIAN)(2)]BF(4) where M = Cu(1) (1) and Ag(1) (2), [M(o,d-iPr(2)C(6)H(3)-BIAN)(NCMe)(2)]BF(4) where M = Cu(1) (3) and Ag(1) (4), and [Ag(o,d-iPr(2)C(6)H(3)-BIAN)(2)]BF(4) (5). The crystal structures of compounds 1-3 and 5 were solved by singlecrystal X-ray diffraction. In all cases copper(I) or silver(I) are in a distorted tetrahedron that is constructed from the four nitrogen atoms of the two a-diimine ligands or, in 3, from one a-diimine ligand and two acetonitrile molecules. All compounds were characterized by elemental analyses, matrix-assisted laser desorption ionization time-of-flight mass spectrometry, and IR, UV-vis, and (1)H NMR spectroscopy. The analysis of the molecular geometry and the energetic changes for the formation reactions of the complexes, in a CH(2)Cl(2) solution, were evaluated by density functional theory calculations and compared with the experimental results.

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Transparent, undoped semiconductive thin films of zinc oxide were deposited by radio frequency plasma enhanced reactive thermal evaporation of zinc rods in the presence of oxygen at room temperature, without any post-deposition annealing treatments. The study of the variation of rf power, in the range 5-200W, on the main properties of these films was made. A decrease of the electrical conductivity of these films with increasing rf power was observed (10(-3) to 10(-12) (Omega cm)(-1)), respectively, while the average visible transparency was kept practically constant (approximate to 80%). From this initial study, a set of bottom-gate type thin-film transistors were made using the most promising semiconductor materials. Preliminary I(V) measurements showed all transistors working, with best results obtained from zinc oxide material deposited at the lowest rf power (20 W), within the deposition conditions range which leads to semiconductive material. Such devices presented an I-on (20 V)/I-off (-5 V) ratio of 6 x 10(6) and a field-effect mobility of 0.37 cm(2)/(V s). (C) 2010 Elsevier B.V. All rights reserved.

Transparent, undoped semiconductive thin films of zinc oxide were deposited by radio frequency plasma enhanced reactive thermal evaporation of zinc rods in the presence of oxygen at room temperature, without any post-deposition annealing treatments. The study of the variation of rf power, in the range 5-200W, on the main properties of these films was made. A decrease of the electrical conductivity of these films with increasing rf power was observed (10(-3) to 10(-12) (Omega cm)(-1)), respectively, while the average visible transparency was kept practically constant (approximate to 80%). From this initial study, a set of bottom-gate type thin-film transistors were made using the most promising semiconductor materials. Preliminary I(V) measurements showed all transistors working, with best results obtained from zinc oxide material deposited at the lowest rf power (20 W), within the deposition conditions range which leads to semiconductive material. Such devices presented an I-on (20 V)/I-off (-5 V) ratio of 6 x 10(6) and a field-effect mobility of 0.37 cm(2)/(V s). (C) 2010 Elsevier B.V. All rights reserved.

Pseudoazurins are small type 1 copper proteins that are involved in the flow of electrons between various electron donors and acceptors in the bacterial periplasm, mostly under denitrifying conditions. The previously determined structure of Paracoccus pantotrophus pseudoazurin in the oxidized form was improved to a nominal resolution of 1.4 angstrom, with R and R-free values of 0.188 and 0.206, respectively. This high-resolution structure makes it possible to analyze the interactions between the monomers and the solvent structure in detail. Analysis of the high-resolution structure revealed the structural regions that are responsible for monomer-monomer recognition during dimer formation and for protein-protein interaction and that are important for partner recognition. The pseudoazurin structure was compared with other structures of various type 1 copper proteins and these were grouped into families according to similarities in their secondary structure; this may be useful in the annotation of copper proteins in newly sequenced genomes and in the identification of novel copper proteins.

In this paper we present an amorphous silicon device that can be used in two operation modes to measure the concentration of ions in solution. While crystalline devices present a higher sensitivity, their amorphous counterpart present a much lower fabrication cost, thus enabling the production of cheap disposable sensors for use, for example, in the food industry. The devices were fabricated on glass substrates by the PECVD technique in the top gate configuration, where the metallic gate is replaced by an electrolytic solution with an immersed Ag/AgCl reference electrode. Silicon nitride is used as gate dielectric enhancing the sensitivity and passivation layer used to avoid leakage and electrochemical reactions. In this article we report on the semiconductor unit, showing that the device can be operated in a light-assisted mode, where changes in the pH produce changes on the measured ac photocurrent. In alternative the device can be operated as a conventional ion selective field effect device where changes in the pH induce changes in the transistor's threshold voltage.