Given a finitely presented monoid and a homotopy base for the monoid, and given an arbitrary Schutzenberger group of the monoid, the main result of this paper gives a homotopy base, and presentation, for the Schutzenberger group. In the case that the R-class R' of the Schutzenberger group G(H) has only finitely many H-classes, and there is an element s of the multiplicative right pointwise stabilizer of H, such that under the left action of the monoid on its R-classes the intersection of the orbit of the R-class of s with the inverse orbit of R' is finite, then finiteness of the presentation and of the homotopy base is preserved.

The social dimension of worker-robot interaction in industry is becoming a decisive aspect of robotics development. Many problems and difficulties of robotics research are not only related to technical issues but framed by social aspects. Human-robot interaction (HRI) as a specific research field of robotics tackles this issue. The debate on social involvement in HRI design of a few decades ago must be re-opened. A start-up project was initiated in 2012 at Karlsruhe Institute of Technology (KIT) to define a new research field and establish a conceptual framework on HRI. It was related to recent developments in the manufacturing industry and professional service robotics. The aim was to cooperate with other research teams to establish an expert network in this field. Special focus was placed on the design of work organisation models and issues of robotics technology design for worker (or operator) and robot interaction. In the current paper we present the most important conclusions from these research activities. –

The social dimension of worker-robot interac-tion in industry is becoming a decisive aspect of robotics development. Many problems and difficulties of robotics research are not only related to technical issues but framed by social aspects. Human-robot interaction (HRI) as a specific research field of robotics tackles this issue. The debate on social involvement in HRI design of a few decades ago must be re-opened. A start-up project was initiated in 2012 at Karlsruhe Institute of Technology (KIT) to define a new research field and establish a conceptual framework on HRI. It was related to recent developments in the manufacturing industry and professional service robotics. The aim was to cooperate with other research teams to establish an expert network in this field. Special focus was placed on the design of work organisation models and issues of robotics technology design for worker (or operator) and robot interaction. In the current paper we present the most important conclusions from these research activities.

A high-gain amplifier topology, with all single n-type enhancement transistors, is proposed in this paper. This type of circuits are essential in transparent TFT technologies, such as GIZO and ZnO that lack complementary type transistor. All circuits were simulated using BSIM3V3 model of a 0.35 μm CMOS technology, due to the absence of a complete electrical model for the TFTs. Results reveal that the proposed circuit promise more gain, lower power consumption and higher bandwidth than the existing solutions under identical bias conditions. © 2013 IEEE.

Transparent TFT technologies, with amorphous semiconductor oxides are lacking a complementary type transistor. This represents a real challenge, when the design of high-gain amplifiers are considered, without resorting to passive resistive elements. However, some solutions do exist to overcome the lack of a p-type transistor. This paper then presents a comparison analysis of two high-gain single-stage amplifier topologies using only n-type enhancement transistors. In these circuits, high gain is achieved using positive feedback for the load impedance. The comparison is carried out in terms of bandwidth, power consumption and complexity under identical bias conditions. Further, the same load impedance is used to develop a novel high-gain multiplier. All the circuits are simulated using a 0.35 μm CMOS technology, as it is easy to test the reliability of the methods, since CMOS transistors have trustworthy models. © 2013 IEEE.

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There have been many and very significant advances in the Wireless Power Transfer, resulting up to now in flexible and safe battery charging eliminating the necessity of power cables. The relatively low frequencies (tens of kilohertz) applied for those {"}classical{"} chargers are already well developed. A {"}new{"} technology appeared now that makes possible to apply a strong magnetic resonant coupling. Similar experiments were applied by N. Tesla more than a hundred years ago but now the researchers are capable to reach much higher frequencies. To achieve the necessary high level of magnetic field coupling it is essential to allow high levels of electric current intensity inside the resonant loops. In this article the achievement of highest magnetic field is analysed and experimented. Some results are discussed based on the choice of the resonant loop type and construction. The applications in the on-line energy supply for the EV are one of the aimed goals. The other goal may be the future more efficient induction machine.

The concept of H-decompositions of graphs was first introduced by Erdös, Goodman and Pósa in 1966, who were motivated by the problem of representing graphs by set intersections. Given graphs G and H, an H-decomposition of G is a partition of the edge set of G such that each part is either a single edge or forms a graph isomorphic to H. Let Ф(n,H) be the smallest number Ф, such that, any graph of order n admits an H-decomposition with at most Ф parts. The exact computation of Ф(n,H) for an arbitrary H is still an open problem. Recently, a few papers have been published about this problem. In this survey we will bring together all the results about H-decompositions. We will also introduce two new related problems, namely Weighted H-Decompositions of graphs and Monochromatic H-Decompositions of graphs.

This paper deals with high transparent and high conductive oxides based on polycrystalline titanium (Ti) doped (0.5-3 at.%) indium oxide (IO) thin films produced on glass substrates at 400 °C by spray pyrolysis technique. X-ray diffraction analysis confirmed the cubic bixbyite structure of indium oxide. A high mobility of ∼ 97 cm2 V- 1 s- 1, a carrier concentration of ∼ 1.55 × 1020 cm- 3 and a resistivity of ∼ 4.11 × 10- 4 Ω-cm with ∼ 83% of transmittance in the wavelength ranging between 400 and 2500 nm were obtained for 2 at.% Ti doping films, rivalling so to the best known transparent conducting oxide based on indium tin oxide. Moreover, the transmittance in the broad wavelength ranging between 400 and 2500 nm is over 83%, leading so to an increasing carrier generation towards the near infrared region of the spectrum, as required for applications such as solar cells. We also notice that increasing the doping concentration widened the optical band gap and caused a small Burstein-Moss shift, due to mobility decrease, as expected. © 2012 Published by Elsevier B.V.