Zhang, S., L. Raniero, E. Fortunato, L. Pereira, N. Martins, P. Canhola, I. Ferreira, N. Nedev, H. Águas, and R. Martins. "
{Characterization of silicon carbide thin films prepared by VHF-PECVD technology}."
Journal of Non-Crystalline Solids. 338-340 (2004): 530-533.
Abstractn/a
Pereira, L., H. Aguas, R. Igreja, R. M. S. Martins, N. Nedev, L. Raniero, E. Fortunato, and R. Martins. "
Electronic, Optoelectronic, Spintronic and Ferroelectric Materials-Sputtering Preparation of Silicon Nitride Thin Films for Gate Dielectric Applications."
Materials Science Forum. Vol. 455. Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-, 2004. 69-72.
Abstractn/a
b c Nedev, N.a b, Beshkov Fortunato Georgiev Ivanov Raniero Zhang Martins G. a E. b. "
Influence of the rapid thermal annealing on the properties of thin a-Si films."
Materials Science Forum. 455-456 (2004): 108-111.
AbstractThe variation of the structure, morphology and the electrical properties of thin amorphous silicon films caused by Rapid Thermal Annealing is studied. The films annealed at 1200°C for 2 minutes change their structure to polycrystalline and as a result their resistivity decreases by 4 orders of magnitude. Due to the small thickness of the as deposited amorphous silicon the obtained poly-Si is strongly irregular and has many discontinuities in its texture.