Rodrigo Martins

Citation:

b c Nedev, N.a b, Beshkov Fortunato Georgiev Ivanov Raniero Zhang Martins G. a E. b. "Influence of the rapid thermal annealing on the properties of thin a-Si films." Materials Science Forum. 455-456 (2004): 108-111.

Abstract:

The variation of the structure, morphology and the electrical properties of thin amorphous silicon films caused by Rapid Thermal Annealing is studied. The films annealed at 1200°C for 2 minutes change their structure to polycrystalline and as a result their resistivity decreases by 4 orders of magnitude. Due to the small thickness of the as deposited amorphous silicon the obtained poly-Si is strongly irregular and has many discontinuities in its texture.

Notes:

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