Performances of hafnium oxide produced by radio frequency sputtering for gate dielectric application

Citation:
Pereira, L., A. Marques, H. Águas, N. Nedev, S. Georgiev, E. Fortunato, and R. Martins. "Performances of hafnium oxide produced by radio frequency sputtering for gate dielectric application." Materials Science and Engineering: B. 109 (2004): 89-93.

Abstract:

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Notes:

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