Fortunato, Elvira, Alexandra Gonçalves, António Marques, Ana Pimentel, Pedro Barquinha, Hugo Águas, Lu{\'ıs Pereira, Leandro Raniero, Gonçalo Gonçalves, Isabel Ferreira, and others. "
Multifunctional thin film zinc oxide semiconductors: Application to electronic devices."
Materials science forum. Vol. 514. Trans Tech Publications, 2006. 3-7.
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Fortunato, E., A. Gonc@ 4alves, A. Marques, A. Pimentel, P. Barquinha, H. Aguas, L. Pereira, L. Raniero, G. GONCALVES, I. Ferreira, and others. "
PART 1-I-Electronic, Magnetic and Photonic Materials-Multifunctional Thin Film Zinc Oxide Semiconductors: Application to Electronic Devices."
Materials Science Forum. Vol. 514516. Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-, 2006. 3-7.
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Prabaharan, M., J. P. Borges, M. H. Godinho, and J. F. Mano PART 2-IV Polymers, Molecular Materials and Biomaterials-Liquid Crystalline Behaviour of Chitosan in Formic, Acetic, Monochloroacetic Acid Solutions. Vol. 514516. Materials Science Forum, 514516. Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-, 2006.
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c c Martins, N.a, Canhola Quintela Ferreira Raniero Fortunato Martins P. a M. b. "
Performances of an in-line PECVD system used to produce amorphous and nanocrystalline silicon solar cells."
Thin Solid Films. 511-512 (2006): 238-242.
AbstractThis paper presents the performances of an in-line plasma enhanced chemical vapor deposition system constituted by 5 chambers and one external unloaded chamber used in the simultaneous manufacturing of 4 large (30 cm × 40 cm) solar cells deposited on glass substrates. The system is fully automatically controlled by a Programmable Logic Controller using a specific developed software that allows devices mass production without losing the flexibility to perform process innovations according to the industrial requests, i.e. fast and secure changes and optimizations. Overall, the process shift is of about 15 min per each set of 4 solar cells. Without a buffer layer, solar cells with efficiencies of about 9% were produced by the proper tuning of the i-layer production conditions. © 2005 Elsevier B.V. All rights reserved.
Martins, R., V. Chu, E. Fortunato, JP Conde, and I. Ferreira Proceedings of the Twenty First International Conference on Amorphous and Nanocrystalline Semiconductors-Science and Technology-Calouste Gulbenkian Foundation, Lisbon, Portugal-September 4-9, 2005 Preface. ELSEVIER SCIENCE BV PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS, 2006.
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Costa, A. M., M. C. Martins, J. P. Santos, P. Indelicato, and F. Parente. "
Relativistic calculation of Kβ hypersatellite energies and transition probabilities for selected atoms with 13<=Z<=80."
Journal of Physics B: Atomic and Molecular Physics. 39 (2006): 2355-2366.
AbstractEnergies and transition probabilities of Kβ hypersatellite lines are computed using the Dirac–Fock model for several values of Z throughout the periodic table. The influence of the Breit interaction on the energy shifts from the corresponding diagram lines and on the Kβh1/Kβh3 intensity ratio is evaluated. The widths of the double-K hole levels are calculated for Al and Sc. The results are compared to experiment and to other theoretical calculations.