The isoconversional methods (Friedman (FR), Flynn-Wall-Ozawa (FWO) and Kissinger-Akahira-Sunose (KAS)) were applied for evaluating the dependencies of the activation energy (E) on the mass loss (Δm) corresponding to the non-isothermal decomposition of two Zn acetate-based gel precursors for ZnO thin films whose preparation differs by the drying temperature of the liquid sol-precursor (125°C for sample A, and 150°C for sample B). Although both investigated samples exhibit similar decomposition steps, strong differences between E vs. Δm curves as well as among the characteristic parameters of the decomposition steps, directly evaluated from TG, DTG and DTA curves, were put in evidence. © 2007 Springer Science+Business Media LLC.

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This study describes the characterisation of whey protein hydrolysates obtained from tryptic hydrolysis to assess their application as ingredients with angiotensin-converting-enzyme (ACE) inhibitory action. The levels of a-lactalbumin (alpha-la) and P-lactoglobulin (beta-lg) remaining after hydrolysis were quantified. Peptides were separated by RP-HPLC, and Ala-Leu-Pro-Met-His-Ile-Arg (ALPMHIR), the most potent beta-lg-derived ACE-inhibitory peptide was monitored. A correlation curve was established for the production of this peptide as a function of hydrolysis time. Heat-induced gelation of hydrolysates was studied by small-deformation rheology. The gelation times and the strength of the final gels were highly dependent on the degree of hydrolysis. Smaller peptides liberated by hydrolysis contributed to the inability of whey protein hydrolysates to gel. (c) 2006 Elsevier Ltd. All rights reserved.

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The transition probabilities of Kα hypersatellite lines and energy shifts with respect to the corresponding diagram lines are computed using the Dirac–Fock model for several values of atomic number Z throughout the periodic table. The influence of the Breit interaction on the Kα₁^h/Kα₂^h line intensity ratio, Kα₁^h and Kα₂^h line energy shifts and Kα₁^h to Kα₂^h line energy splitting is evaluated. Double-K shell hole threshold values for selected elements with 23 ⩽Z⩽ 30, calculated within the same approach, are compared with available experimental results.

The transition probabilities of K&alpha; hypersatellite lines and energy shifts with respect to the corresponding diagram lines are computed using the Dirac&ndash;Fock model for several values of atomic number <I>Z</I> throughout the periodic table. The influence of the Breit interaction on the K&alpha;<SUB>1</SUB><SUP>h</SUP>/K&alpha;<SUB>2</SUB><SUP>h</SUP> line intensity ratio, K&alpha;<SUB>1</SUB><SUP>h</SUP> and K&alpha;<SUB>2</SUB><SUP>h</SUP> line energy shifts and K&alpha;<SUB>1</SUB><SUP>h</SUP> to K&alpha;<SUB>2</SUB><SUP>h</SUP> line energy splitting is evaluated. Double-K shell hole threshold values for selected elements with 23 &les;<I>Z</I>&les; 30, calculated within the same approach, are compared with available experimental results.

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This paper aims to discuss the effect of order and disorder on the electrical performances of covalent silicon semiconductors and ZnO based ionic oxide semiconductors used as active channel layers in thin film transistors. The effect of disorder on covalent semiconductors directly affects their electrical transport properties due to the asymmetric behaviour of sp states, while in ionic oxide semiconductors it is found that this effect is small due to the fact that angular disorder has no effect on the spherical symmetry of s states. To this we must add that the mobility of carriers in both systems is quite different, being also affected by electron-phonon interactions (weak in silicon and strong in ionic oxides leading to formation of polarons). Besides, the impurity doping effect and the presence of vacancies in disordered silicon and in ionic oxides behave differently, which will influence the thin film properties and so, the performances of the devices produced. © 2007 Springer-Verlag.

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The role of order and disorder on the electronic performances of n -type ionic oxides such as zinc oxide, gallium zinc oxide, and indium zinc oxide used as active (channel) or passive (drain/source) layers in thin film transistors (TFTs) processed at room temperature are discussed, taking as reference the known behavior observed in conventional covalent semiconductors such as silicon. The work performed shows that while in the oxide semiconductors the Fermi level can be pinned up within the conduction band, independent of the state of order, the same does not happen with silicon. Besides, in the oxide semiconductors the carrier mobility is not bandtail limited and so disorder does not affect so strongly the mobility as it happens in covalent semiconductors. The electrical properties of the oxide films (resistivity, carrier concentration, and mobility) are highly dependent on the oxygen vacancies (source of free carriers), which can be controlled by changing the oxygen partial pressure during the deposition process and/or by adding other metal ions to the matrix. In this case, we make the oxide matrix less sensitive to the presence of oxygen, widening the range of oxygen partial pressures that can be used and thus improving the process control of the film resistivity. The results obtained in fully transparent TFT using polycrystalline ZnO or amorphous indium zinc oxide (IZO) as channel layers and highly conductive poly/nanocrystalline ZGO films or amorphous IZO as drain/source layers show that both devices work in the enhancement mode, but the TFT with the highest electronic saturation mobility and on/off ratio 49.9 cm2 V s and 4.3× 108, respectively, are the ones in which the active and passive layers are amorphous. The ZnO TFT whose channel is based on polycrystalline ZnO, the mobility and on/off ratio are, respectively, 26 cm2 V s and 3× 106. This behavior is attributed to the fact that the electronic transport is governed by the s -like metal cation conduction bands, not significantly affected by any type of angular disorder promoted by the 2p O states related to the valence band, or small amounts of incorporated metal impurities that lead to a better control of vacancies and of the TFT off current. © 2007 American Institute of Physics.

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Cross-linked polyethylene (XLPE) is currently widely used as an insulating material for power cables due to its good physical properties, however when in use it undergoes an electrical ageing process. Its ability to trap electric charge can give rise to space charge accumulation in the bulk of the polymer and produce localised electric stresses that can lead to cable failure, since the electric field will be increased above the design stress in some regions favouring the initiation of degradation there. In this work the PEA (pulsed electro-acoustic) method was used to compare the charge dynamics in three samples (XLPE cable peelings) aged in different ways (electrothermally in the laboratory, field aged in service and thermally aged in the laboratory). Very different transient behavior was found depending upon the ageing history. This is related to differences in the migration of chemical species in the insulation layer, which are known to act as charge traps. All materials showed heterocharge peaks when the space charge reached stability, the magnitude of which seems to be related to the severity of the ageing. (c) 2007 Elsevier B.V. All rights reserved.

Cross-linked polyethylene (XLPE) is currently widely used as an insulating material for power cables due to its good physical properties, however when in use it undergoes an electrical ageing process. Its ability to trap electric charge can give rise to space charge accumulation in the bulk of the polymer and produce localised electric stresses that can lead to cable failure, since the electric field will be increased above the design stress in some regions favouring the initiation of degradation there. In this work the PEA (pulsed electro-acoustic) method was used to compare the charge dynamics in three samples (XLPE cable peelings) aged in different ways (electrothermally in the laboratory, field aged in service and thermally aged in the laboratory). Very different transient behavior was found depending upon the ageing history. This is related to differences in the migration of chemical species in the insulation layer, which are known to act as charge traps. All materials showed heterocharge peaks when the space charge reached stability, the magnitude of which seems to be related to the severity of the ageing.

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Reactive oxygen species (ROS), when in excess, are among the most deleterious species an organism can deal with. The physiological effects of ROS include amino acid chain cleavage, DNA degradation and lipid oxidation, among others. They can be formed in the cytoplasm in a variety of ways, including autooxidation reactions (FMN- and FAD-containing enzymes) and Fenton reactions as a result of the cytoplasmatic pool of iron ions. The superoxide anion (021, despite its short half-life in solution, is particularly pernicious as it can form other reactive ROS (such as the strong oxidant peroxynitrite) or oxidize and/or reduce cellular components. For strict anaerobic or microaerophilic bacteria it is of particular importance to be able to dispose of ROS in a controlled manner, especially if these organisms are temporarily exposed to air. This review aims to describe the structural characteristics of superoxide reductases (SORs) and mechanistic aspects of biological superoxide anion reduction. SORs can be considered the main class of enzymes behind the oxygen detoxification pathway of anaerobic and microaerophilic bacteria. The geometry of the active site (three classes have been described), the possible electron donors in vivo and the current hypothesis for the catalytic mechanism will be discussed. Some phylogenetic considerations are presented, regarding the primary structure of SORs currently available in genome databases. ((c) Wiley-VCH Verlag GmbH & Co. KGaA, 69451 Weinheim, Germany, 2007).

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