Software developers are expected to protect concurrent accesses to shared regions of memory with some mutual exclusion primitive that ensures atomicity properties to a sequence of program statements. This approach prevents data races but may fail to provide all necessary correctness properties.The composition of correlated atomic operations without further synchronization may cause atomicity violations. Atomic violations may be avoided by grouping the correlated atomic regions in a single larger atomic scope. Concurrent programs are particularly prone to atomicity violations when they use services provided by third party packages or modules, since the programmer may fail to identify which services are correlated. In this paper we propose to use contracts for concurrency, where the developer of a module writes a set of contract terms that specify which methods are correlated and must be executed in the same atomic scope. These contracts are then used to verify the correctness of the main program with respect to the usage of the module(s). If a contract is well defined and complete, and the main program respects it, then the program is safe from atomicity violations with respect to that module. We also propose a static analysis based methodology to verify contracts for concurrency that we applied to some real-world software packages. The bug we found in Tomcat 6.0 was immediately acknowledged and corrected by its development team.

Distributed transactional memory (DTM) presents itself as a highly expressive and programmer friendly model for con- currency control in distributed programming. Current DTM systems make use of both data distribution and replication as a way of providing scalability and fault tolerance, but both techniques have advantages and drawbacks. As such, each one is suitable for different target applications, and deployment environments. In this paper we address the support of different data replication models in DTM. To that end we propose ReDstm, a modular and non-intrusive framework for DTM, that supports multiple data replication models in a general purpose programming language (Java). We show its application in the implementation of distributed software transactional memories with different replication models, and evaluate the framework via a set of well-known benchmarks, analysing the impact of the different replication models on memory usage and transaction throughput.

Distributed transactional memory (DTM) presents itself as a highly expressive and programmer friendly model for concurrency control in distributed programming. Current DTM systems make use of both data distribution and replication as a way of providing scalability and fault tolerance, but both techniques have advantages and drawbacks. As such, each one is suitable for different target applications, and deployment environments. In this paper we address the support of different data replication models in DTM. To that end we propose ReDstm, a modular and non-intrusive framework for DTM, that supports multiple data replication models in a general purpose programming language (Java). We show its application in the implementation of distributed software transactional memories with different replication models, and evaluate the framework via a set of well-known benchmarks, analysing the impact of the different replication models on memory usage and transaction throughput.

A miniaturized version of the double cantilever beam (DCB) test is used to determine the fracture energy in human cortical bone under pure mode I loading. An equivalent crack length based data-reduction scheme is used with remarkable advantages relative to classical methods. Digital image correlation (DIC) technique is employed to determine crack opening displacement at the crack tip being correlated with the evolution of fracture energy. A method is presented to obtain the cohesive law (trapezoidal bilinear softening) mimicking the mechanical behavior observed in bone. Cohesive zone modeling (CZM) (finite-element method) was performed to validate the procedure showing excellent agreement.

The formulation of a bending vibration problem of an elastically restrained Bernoulli-Euler beam carrying a finite number of concentrated elements along its length is presented. In this study, the authors exploit the application of the differential evolution optimization technique to identify the torsional stiffness properties of the elastic supports of a Bernoulli-Euler beam. This hybrid strategy allows the determination of the natural frequencies and mode shapes of continuous beams, taking into account the effect of attached concentrated masses and rotational inertias, followed by a reconciliation step between the theoretical model results and the experimental ones. The proposed optimal identification of the elastic support parameters is computationally demanding if the exact eigenproblem solving is considered. Hence, the use of a Gaussian process regression as a meta-model is addressed. An experimental application is used in order to assess the accuracy of the estimated parameters throughout the comparison of the experimentally obtained natural frequency, from impact tests, and the correspondent computed eigenfrequency.

Here, a simple, nontoxic, and inexpensive "water-inducement" technique for the fabrication of oxide thin films at low annealing temperatures is reported. For water-induced (WI) precursor solution, the solvent is composed of water without additional organic additives and catalysts. The thermogravimetric analysis indicates that the annealing temperature can be lowered by prolonging the annealing time. A systematic study is carried out to reveal the annealing condition dependence on the performance of the thin-film transistors (TFTs). The WI indium-zinc oxide (IZO) TFT integrated on SiO2 dielectric, annealed at 300 °C for 2 h, exhibits a saturation mobility of 3.35 cm2 V-1 s-1 and an on-to-off current ratio of ≈108. Interestingly, through prolonging the annealing time to 4 h, the electrical parameters of IZO TFTs annealed at 230 °C are comparable with the TFTs annealed at 300 °C. Finally, fully WI IZO TFT based on YOx dielectric is integrated and investigated. This TFT device can be regarded as "green electronics" in a true sense, because no organic-related additives are used during the whole device fabrication process. The as-fabricated IZO/YOx TFT exhibits excellent electron transport characteristics with low operating voltage (≈1.5 V), small subthreshold swing voltage of 65 mV dec-1 and the mobility in excess of 25 cm2 V-1 s-1. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The p/i interface plays a major role in the conversion efficiency of nanocrystalline silicon (nc-Si:H) solar cells. Under plasma-enhanced chemical vapor deposition (PECVD) of the intrinsic (i) nc-Si:H layer, ion bombardment can severely affect the underlying p-doped layer and degrade the solar cell performance. The core of the present work is to investigate the effect of light and heavy ion bombardment on the structural modifications of the p-layer during the p/i interface formation. The properties of the nc-Si:H materials deposited under distinct conditions are analyzed and correlated to the deposition rate and the resulting cell efficiency. To recreate the ion bombardment during the initial stages of the i-layer deposition on the p-layer, hydrogen plasma treatment was performed for 30 s (light ion bombardment), after which a flux of silane was introduced into the deposition chamber in order to initiate the heavy ion bombardment and growth of an ultra-thin (5 nm) i-layer. The structural changes of the p-type nc-Si:H layers were observed by spectroscopic ellipsometry. The obtained results confirm that detrimental structural modifications (e.g. partial amorphization of the sub-surface region and bulk) occur in the p-layer, caused by the ion bombardment. To minimize this effect, a protective buffer layer is investigated able to improve the performance of the solar cells fabricated under increased growth rate conditions. © 2015 Elsevier B.V. All rights reserved.