Solution-processed p-type oxide semiconductors have recently attracted increasing interests for the applications in low-cost optoelectronic devices and low-power consumption complementary metal-oxide-semiconductor circuits. In this work, p-type nickel oxide (NiOx) thin films were prepared using low-temperature solution process and integrated as the channel layer in thin-film transistors (TFTs). The electrical properties of NiOx TFTs, together with the characteristics of NiOx thin films, were systematically investigated as a function of annealing temperature. By introducing aqueous high-k aluminum oxide (Al2O3) gate dielectric, the electrical performance of NiOx TFT was improved significantly compared with those based on SiO2 dielectric. Particularly, the hole mobility was found to be 60 times enhancement, quantitatively from 0.07 to 4.4 cm2/V s, which is mainly beneficial from the high areal capacitance of the Al2O3 dielectric and high-quality NiOx/Al2O3 interface. This simple solution-based method for producing p-type oxide TFTs is promising for next-generation oxide-based electronic applications. © 2016 Author(s).

The post-deposition modification of ZnO-based transparent conductive oxides (TCOs) can be the key to produce thin films with optoelectronic properties similar to indium tin oxide (ITO), but at a much lower cost. Here, we present electro-optical results achieved for post-deposition annealing of Al–Zn–O (AZO), AZO:H, Ga–Zn–O:H (GZO:H), and Zn–O:H (ZNO:H) thin films deposited by RF sputtering at room temperature. These studies comprise results of thermal annealing at atmospheric pressure, vacuum, forming gas, H2 and Ar atmospheres, and H2 and Ar plasmas, which lead to significant enhancement of their electro-optical properties, which are correlated to morphological and structural improvements. The post-deposition annealing leads to an enhancement in resistivity above 40% for AZO, AZO:H, and GZO:H, reaching ρ ≈ 2.6–3.5 × 10−4 Ωcm, while ZnO:H showed a lower improvement of 13%. The averaged optical transmittance in the visible region is about 89% for the investigated TCOs. Such results match the properties of state-of-art ITO (ρ ≈ 10−4 Ωcm and transmittance in VIS range of 90%) employing much more earth-abundant materials. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Abstract Due to the introduction of distributed renewable energy technologies with variable resource availability, the need of flexible electrical systems is evident. In general, flexibility is achieved from the supply side and often using carbon intensive energy generators. Therefore, improving the flexibility of the electrical system by taking advantage of renewable energy generation capacities and demand response measures in buildings is of major importance for a sustainable development. Control systems to implement these demand response measures need to quantify the flexibility of the respective buildings. Having this into consideration, this paper aims at presenting a literature review on methodologies to quantify the energy flexibility of buildings.

This study focuses on the assessment of the degradation processes occurring in three sandstone infills of fossilized Late Jurassic ornithopod tridactyl footprints, found in 2001 in a coastline cliff in Porto das Barcas (Lourinhã, Portugal) and exhibited in a museum display since 2004. These dinosaur footprints present nowadays severe decay phenomena compromising their physical integrity and are leading gradually to their loss of value. The deterioration patterns were recorded, a map of their distribution was prepared and several samples were collected both in the dinosaur footprints and in the coastline cliff. Different analytical procedures were applied such as XRD, FTIR, FESEM and Ion Chromatography. A microclimatic survey was also performed and air temperature and relative humidity was measured during eight months both indoor and also outdoor. The decay patterns observed are a combination intrinsic and extrinsic factors the stone material, namely swelling of clay minerals in the rock matrix (smectite and chlorite-smectite mixed-layer), presence of salts (mainly chlorides), application of past conservation treatments (poly(vinyl) acetate and epoxy resins) and with the museum’s indoor thermohygrometric conditions (mainly non-stable hygrometric conditions). This scientific knowledge is therefore essential to the sustainable preservation of this paleontological heritage.

Robótica virtual ou robótica tangível, qual a ferramenta mais apelativa para os professores e alunos? Fomos à procura da resposta junto de cinco alunos que participaram em atividades com estas duas ferramentas. As atividades foram desenvolvidas no

High-k alkaline lithium oxide (LiOx) thin films are fabricated by spin-coating method. The LiOx thin films are annealed at different temperatures and characterized by various techniques. An optimized LiOx dielectric is achieved at an annealing temperature of 300 °C and exhibits wide bandgap of ≈5.5 eV, smooth surface, relatively permittivity of ≈6.7, and low leakage current density. The as-fabricated LiOx thin films are integrated, as gate dielectrics, in both n-channel indium oxide (In2O3) and p-channel cupric oxide (CuO) transistors. The optimized In2O3/LiOx thin-film transistor (TFT) exhibits high performance and high stability, such as Ion/Ioff of 107, electron mobility of 5.69 cm2 V−1 s−1, subthreshold swing of 70 mV dec−1, negligible hysteresis, and threshold voltage shift of 0.1 V under bias stress for 1.5 h. Meanwhile, the p-channel CuO TFT based on LiOx dielectric shows high Ion/Ioff of 105 and hole mobility of 1.72 cm2 V−1 s−1. All the electrical performances are achieved at an ultra-low operating voltage of 2 V. Considering the simple procedure, the moderate annealing temperature, and the low power consumption merits, these outstanding characteristics represent a significant advance toward the development of battery compatible and portable electronics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim