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The present work focuses on a qualitative analysis of localised I-V characteristics based on the nanostructure morphology of highly dense arrays of p-type NiO nano-pillars (NiO-NPs). Vertically aligned NiO-NPs have been grown on different substrates by using a glancing angle deposition (GLAD) technique. The preferred orientation of as grown NiO-NPs was controlled by the deposition pressure. The NiO-NPs displayed a polar surface with a microscopic dipole moment along the (111) plane (Tasker's type III). Consequently, the crystal plane dependent surface electron accumulation layer and the lattice disorder at the grain boundary interface showed a non-uniform current distribution throughout the sample surface, demonstrated by a conducting AFM technique (c-AFM). The variation in I-V for different points in a single current distribution grain (CD-grain) has been attributed to the variation of Schottky barrier height (SBH) at the metal-semiconductor (M-S) interface. Furthermore, we observed that the strain produced during the NiO-NPs growth can modulate the SBH. Inbound strain acts as an external field to influence the local electric field at the M-S interface causing a variation in SBH with the NPs orientation. This paper shows that vertical arrays of NiO-NPs are potential candidates for nanoscale devices because they have a great impact on the local current transport mechanism due to its nanostructure morphology.
We present the results obtained with an extended-gate ISFET totally based on amorphous oxides (GIZO as the semiconductor, {\textless}formula formulatype="inline"{\textgreater}{\textless}tex Notation="TeX"{\textgreater}{\$}{\{}hbox{\{}Ta{\}}{\}}{\_}{\{}2{\}}{\{}hbox{\{}O{\}}{\}}{\_}{\{}5{\}}{\{}hbox{\{}:SiO{\}}{\}}{\_}{\{}2{\}}{\$}{\textless}/tex{\textgreater} {\textless}/formula{\textgreater} as the dielectric and {\textless}formula formulatype="inline"{\textgreater}{\textless}tex Notation="TeX"{\textgreater}{\$}{\{}hbox{\{}Ta{\}}{\}}{\_}{\{}2{\}}{\{}hbox{\{}O{\}}{\}}{\_}{\{}5{\}}{\$}{\textless}/tex{\textgreater} {\textless}/formula{\textgreater} as the sensitive layer). A full characterization of the device was performed with constant ionic strength pH buffer solutions, revealing a sensitivity of 40 mV/pH with small hysteresis, and good linearity in the pH 4{&}{\#}x2013;pH 10 range buffer solutions. These results clearly show that it is possible to produce room-temperature disposable and low cost bio-sensors.
The magnetic and electrical properties of Ni implanted single crystalline TiO2 rutile were studied for nominal implanted fluences between 0.5?1017 cm−2 and 2.0?1017 cm−2 with 150 keV energy, corre- sponding to maximum atomic concentrations between 9 at{%} and 27 at{%} at 65 nm depth, in order to study the formation of metallic oriented aggregates. The results indicate that the as implanted crystals exhibit superparamagnetic behavior for the two higher fluences, which is attributed to the formation of nanosized nickel clusters with an average size related with the implanted concentration, while only paramagnetic behavior is observed for the lowest fluence. Annealing at 1073 K induces the aggregation of the implanted nickel and enhances the magnetization in all samples. The associated anisotropic behavior indicates preferred orientations of the nickel aggregates in the rutile lattice consistent with Rutherford backscattering spectrometry—channelling results. Electrical conductivity displays anisotropic behavior but no magnetoresistive effects were detected.
Thin-films of copper oxide Cu O were produced by thermal oxidation of metallic copper (Cu) at different tempera- tures (150–450 C). The films produced at temperatures of 200, 250 and 300 C showed high Hall motilities of 2.2, 1.9 and 1.6 cm V s , respectively. Single Cu O phases were obtained at 200 Cand its conversion toCuO starts at 250 C. For lower thick- nesses 40 nm, the films oxidized at 250 Cshowed a complete conversion to CuO phase. Successful thin-film transistors (TFTs) were produce by thermal oxidation of a 20 nm Cu film, obtaining p-type Cu O (at 200 C) and CuO (at 250 C) with On/Off ratios of 6 10 and 1 10 , respectively.
The effect of post-deposition annealing temperature on the pH sensitivity of room temperature RF sputtered Ta O was investigated. Structural and morphological features of these films were analyzed before and after annealing at various tem- peratures. The deposited films are amorphous up to 600 Cand crystallize at 700 C in an orthorhombic phase. Electrolyte-insu- lator-semiconductor (EIS) field effect based sensors with an amor- phousTa O sensing layer showed pHsensitivity above 50 mV/pH. For sensors annealed above 200 C pH sensitivity decreased with increasing temperature. Stabilized sensor response andmaximum pHsensitivitywas achieved after low temperature annealing at 200 C, which is compatible with the use of polymeric substrates and application as sensitive layer in oxides TFT-based sensors
The effect of post-deposition annealing temperature on the pH sensitivity of room temperature RF sputtered Ta2O5 was investigated. Structural and morphological features of these films were analyzed before and after annealing at various temperatures. The deposited films are amorphous up to 600 °C and crystallize at 700 °C in an orthorhombic phase. Electrolyte-insulator-semiconductor (EIS) field effect based sensors with an amorphous Ta2O5 sensing layer showed pH sensitivity above 50 mV/pH. For sensors annealed above 200 °C pH sensitivity decreased with increasing temperature. Stabilized sensor response and maximum pH sensitivity was achieved after low temperature annealing at 200 °C, which is compatible with the use of polymeric substrates and application as sensitive layer in oxides TFT-based sensors.
In this work Laponite was combined with a modified abundant natural polymer, (caboxymethyl cellulose), acrylic sodium salt polymer and lithium perchlorate aiming to produce inexpensive and sustainable nanocomposite electrolytes for functional electrochemical devices. Optical, electrochemical, structural, morphological and rheological characterization was performed in order to evaluate their properties and potential advantages as electrolyte. It was verified that the addition of Laponite led to an ionic conductivity at room temperature (25 C) in the range of 6 to 9 ?? 10- 5 Scm - 1 this value being then determined by the composition of the nanocomposite. These electrolytes were applied to electrochromic devices using evaporated nickel oxide thin film as the electrochromic layer. The devices exhibited a significant transmittance modulation that exceeds 45 {%} at 600 nm. ?? 2013 Elsevier B.V.
Engineering, Tissue, Cell Based, Campus D. E. Gualtar, Maria Manuela, Estima Gomes, A. N. A. Rita, Cruz Duarte, Sentido D. E. Fornecer, U. M. A. Estrutura, Porosa E. Interconectada, and Suporte D. E. A. O. Crescimento. "{PT 106220}." 106220 (2013). Abstract
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Engineering, Tissue, Cell Based, Campus D. E. Gualtar, Maria Manuela, Estima Gomes, A. N. A. Rita, Cruz Duarte, Sentido D. E. Fornecer, U. M. A. Estrutura, Porosa E. Interconectada, and Suporte D. E. A. O. Crescimento. "{PT 106220}." 106220 (2013). Abstract
{Reaction of {[}Co(eta(5)-C5H5)(CO)(2)], 1, with 1,1'-bis(diphenylphosphino)ferrocene (dppf) yields the new trinuclear complex {[}Co(eta(5)-C5H5)(CO)](2)(mu-dppf), 2, which was structurally characterised by single crystal X-ray diffraction and showed two Co(eta(5)-C5H5)(CO) moieties covalently linked by a dppf bridge. Electrochemical studies in dichloromethane revealed that both Co(I) and Fe(II) in the precursors were oxidized to Co(II)/Co(III) and Fe(III), respectively. On the other hand, in 2 the two first oxidation waves were assigned to Co, the Fe(II) centre requiring a higher potential than in free dppf. DFT calculations showed that the HOMOs of 2 were localised in the Co fragments, owing to the destabilisation of the Co(eta(5)-C5H5)(CO) orbitals after binding dppf. (C) 2012 Elsevier B.V. All rights reserved.}
The spontaneous two-photon emission in hydrogenlike ions is investigated within the framework of second- order perturbation theory and Dirac’s equation. Special attention is paid to the angular correlation of the emitted photons as well as to the degree of linear polarization of one of the two photons, if the second is just observed under arbitrary angles. Expressions for the angular correlation and the degree of linear polarization are expanded in powers of cosine functions of the two-photon opening angle, whose coefficients depend on the atomic number and the energy sharing of the emitted photons. The effects of including higher (electric and magnetic) multipoles upon the emitted photon pairs beyond the electric-dipole approximation are also discussed. Calculations of the coefficients are performed for the transitions 2s1/2 → 1s1/2, 3d3/2 → 1s1/2, and 3d5/2 → 1s1/2, along the entire hydrogen isoelectronic sequence (1