Publications

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2006
Pereira, L., H. Águas, M. Beckers, R. M. S. Martins, E. Fortunato, and R. Martins. "{Spectroscopic ellipsometry study of nickel induced crystallization of a-Si}." Journal of Non-Crystalline Solids. 352 (2006): 1204-1208. AbstractWebsite
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Raniero, L., I. Ferreira, L. Pereira, H. Águas, E. Fortunato, and R. Martins. "{Study of nanostructured silicon by hydrogen evolution and its application in p–i–n solar cells}." Journal of Non-Crystalline Solids. 352 (2006): 1945-1948. AbstractWebsite
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Pereira, L., H. Águas, E. Fortunato, and R. Martins. "{Nanostructure characterization of high k materials by spectroscopic ellipsometry}." Applied Surface Science. 253 (2006): 339-343. AbstractWebsite
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2007
Fortunato, Elvira, Barquinha, Pedro, Pereira, and Luis. "{Advanced materials for the next generation of thin film transistors}." (2007): 371-373. AbstractWebsite
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Fortunato, E., P. Barquinha, A. Pimentel, L. Pereira, G. Gonçalves, and R. Martins. "{Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm2/Vs}." physica status solidi (RRL) – Rapid Research Letters. 1 (2007): R34-R36. AbstractWebsite
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Pereira, Luis, Aguas, Hugo, Beckers, and Manfred. "{Characterization of nickel induced crystallized silicon by spectroscopic ellipsornetry}." 910 (2007): 529-534. AbstractWebsite
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Pereira, L., R. M. S. Martins, N. Schell, E. Fortunato, and R. Martins. "{Corrigendum to “Nickel assisted metal induced crystallization of silicon: Effect of native silicon oxide layer” [Thin Solid Films 511–512 (2006) 275–279]}." Thin Solid Films. 516 (2007): 104-105. AbstractWebsite
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Martins, R., P. Barquinha, I. Ferreira, L. Pereira, G. Gonçalves, and E. Fortunato. "{Role of order and disorder on the electronic performances of oxide semiconductor thin film transistors}." Journal of Applied Physics. 101 (2007): 044505. AbstractWebsite
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Aguas, Hugo, Pereira, Luis, Costa, and Daniel. "{Role of the oxide layer on the performances of a-Si : H schottky structures applied to PDS fabrication}." 910 (2007): 415-420. AbstractWebsite
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"3 dimensional polymorphous silicon based metal-insulator-semiconductor position sensitive detectors." Thin Solid Films. 515 (2007): 7530-7533. AbstractWebsite
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Martins, R., P. Barquinha, L. Pereira, I. Ferreira, and E. Fortunato. "{Role of order and disorder in covalent semiconductors and ionic oxides used to produce thin film transistors}." Applied Physics A. 89 (2007): 37-42. AbstractWebsite
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Barquinha, P., G. Gonçalves, L. Pereira, R. Martins, and E. Fortunato. "{Effect of annealing temperature on the properties of IZO films and IZO based transparent TFTs}." Thin Solid Films. 515 (2007): 8450-8454. AbstractWebsite
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Gonçalves, G., E. Elangovan, P. Barquinha, L. Pereira, R. Martins, and E. Fortunato. "{Influence of post-annealing temperature on the properties exhibited by ITO, IZO and GZO thin films}." Thin Solid Films. 515 (2007): 8562-8566. AbstractWebsite
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Martins, R., N. Schell, R. Silva, L. Pereira, K. MAHESH, and F. FERNANDES. "{In-situ study of Ni–Ti thin film growth on a TiN intermediate layer by X-ray diffraction}." Sensors and Actuators B: Chemical. 126 (2007): 332-337. AbstractWebsite
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2008
Martins, M. S. Rui, Schell, N., Reuther, and H. "{Characterization of Ni-Ti (Shape Memory Alloy) Thin Film by in-situ XRD and Complementary ex-situ Techniques}." 587-588 (2008): 672-676. AbstractWebsite
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Fortunato, Elvira M. C., Luís M. N. Pereira, Pedro M. C. Barquinha, Ana M. {Botelho do Rego}, Gonçalo Gonçalves, Anna Vilà, Juan R. Morante, and Rodrigo F. P. Martins. "{High mobility indium free amorphous oxide thin film transistors}." Applied Physics Letters. 92 (2008): 222103. AbstractWebsite
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Pereira, L., Barquinha, P., Fortunato, and E. "{Low temperature high k dielectric on poly-Si TFTs}." 354 (2008): 2534-2537. AbstractWebsite
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Pereira, L., H. Águas, M. Beckers, R. M. S. Martins, E. Fortunato, and R. Martins. "{Metal contamination detection in nickel induced crystallized silicon by spectroscopic ellipsometry}." Journal of Non-Crystalline Solids. 354 (2008): 2319-2323. AbstractWebsite
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Fortunato, Elvira, Barquinha, Pedro, Goncalves, and Goncalo. "{New Amorphous Oxide Semiconductor for Thin Film Transistors (TFTs)}." 587-588 (2008): 348-352. AbstractWebsite
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Prabakaran, R., Aguas, H., Pereira, and L. "{Optical and Microstructural Investigations of Porous Silicon Coated with a-Si:H using PECVD Technique}." 587-588 (2008): 308-312. AbstractWebsite
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Barquinha, P., L. Pereira, G. Gonçalves, R. Martins, and E. Fortunato. "{The Effect of Deposition Conditions and Annealing on the Performance of High-Mobility GIZO TFTs}." Electrochemical and Solid-State Letters. 11 (2008): H248. AbstractWebsite
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Barquinha, P., A. Vilà, G. Gonçalves, L. Pereira, R. Martins, J. Morante, and E. Fortunato. "{The role of source and drain material in the performance of GIZO based thin-film transistors}." physica status solidi (a). 205 (2008): 1905-1909. AbstractWebsite
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Martins, Rodrigo, Pedro Barquinha, Luís Pereira, Nuno Correia, Gonçalo Gonçalves, Isabel Ferreira, and Elvira Fortunato. "{Write-erase and read paper memory transistor}." Applied Physics Letters. 93 (2008): 203501. AbstractWebsite
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Figueiredo, V., E. Elangovan, G. Gonçalves, P. Barquinha, L. Pereira, N. Franco, E. Alves, R. Martins, and E. Fortunato. "{Effect of post-annealing on the properties of copper oxide thin films obtained from the oxidation of evaporated metallic copper}." Applied Surface Science. 254 (2008): 3949-3954. AbstractWebsite
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Barquinha, Pedro, Anna M. Vila, Gon\c{C}alo Gon\c{C}alves, LuÍs Pereira, Rodrigo Martins, Joan R. Morante, and Elvira Fortunato. "{Gallium–Indium–Zinc-Oxide-Based Thin-Film Transistors: Influence of the Source/Drain Material}." IEEE Transactions on Electron Devices. 55 (2008): 954-960. AbstractWebsite
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