Publications

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Parthiban, Shanmugam, Elamurugu Elangovan, Pradipta K. Nayak, Alexandra Gonçalves, Daniela Nunes, Lu\'ıs Pereira, Pedro Barquinha, Tito Busani, Elvira Fortunato, and Rodrigo Martins. "{Performances of Microcrystalline Zinc Tin Oxide Thin-Film Transistors Processed by Spray Pyrolysis}." 9 (2013): 825-831. Abstract
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Pei, Z. L., L. Pereira, G. Gonçalves, P. Barquinha, N. Franco, E. Alves, A. M. B. Rego, R. Martins, and E. Fortunato. "{Room-Temperature Cosputtered HfO[sub 2]–Al[sub 2]O[sub 3] Multicomponent Gate Dielectrics}." Electrochemical and Solid-State Letters. 12 (2009): G65. AbstractWebsite
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Pereira, L., H. Águas, R. M. Martins, E. Fortunato, and R. Martins. "{Polycrystalline silicon obtained by gold metal induced crystallization}." Journal of Non-Crystalline Solids. 338-340 (2004): 178-182. AbstractWebsite
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Pereira, L., P. Barquinha, E. Fortunato, and R. Martins. "{Influence of the oxygen/argon ratio on the properties of sputtered hafnium oxide}." Materials Science and Engineering: B. 118 (2005): 210-213. AbstractWebsite
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Pereira, Sónia, Alexandra Gonçalves, Nuno Correia, Joana Pinto, Lu\'ıs Pereira, Rodrigo Martins, and Elvira Fortunato. "{Electrochromic behavior of NiO thin films deposited by e-beam evaporation at room temperature}." Solar Energy Materials and Solar Cells. 120 (2014): 109-115. AbstractWebsite
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Pereira, Lu\'ıs, Pedro Barquinha, Gonçalo Gonçalves, Elvira Fortunato, and Rodrigo Martins. "{Multicomponent dielectrics for oxide TFT}." Eds. Ferechteh H. Teherani, David C. Look, and David J. Rogers. Vol. 8263. 2012. 826316–16. Abstract
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Pereira, L., H. Águas, M. Beckers, R. M. S. Martins, E. Fortunato, and R. Martins. "{Spectroscopic ellipsometry study of nickel induced crystallization of a-Si}." Journal of Non-Crystalline Solids. 352 (2006): 1204-1208. AbstractWebsite
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Pereira, L., P. Barquinha, E. Fortunato, R. Martins, D. Kang, C. J. Kim, H. Lim, I. Song, and Y. Park. "{High k dielectrics for low temperature electronics}." Thin Solid Films. 516 (2008): 1544-1548. AbstractWebsite
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Pereira, L., P. Barquinha, E. Fortunato, and R. Martins. "{Low temperature processed hafnium oxide: Structural and electrical properties}." Materials Science in Semiconductor Processing. 9 (2006): 1125-1132. AbstractWebsite
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Pereira, L., D. Brida, E. Fortunato, I. Ferreira, H. Águas, V. Silva, M. F. M. Costa, V. Teixeira, and R. Martins. "{a-Si:H interface optimisation for thin film position sensitive detectors produced on polymeric substrates}." Journal of Non-Crystalline Solids. 299-302 (2002): 1289-1294. AbstractWebsite
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Pereira, Luis, Aguas, Hugo, Beckers, and Manfred. "{Characterization of nickel induced crystallized silicon by spectroscopic ellipsornetry}." 910 (2007): 529-534. AbstractWebsite
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Pereira, L., H. Águas, P. Vilarinho, E. Fortunato, and R. Martins. "{Metal induced crystallization: Gold versus aluminium}." Journal of Materials Science. 40 (2005): 1387-1391. AbstractWebsite
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Pereira, L., P. Barquinha, E. Fortunato, and R. Martins. "{Influence of metal induced crystallization parameters on the performance of polycrystalline silicon thin film transistors}." Thin Solid Films. 487 (2005): 102-106. AbstractWebsite
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Pereira, L., D. Gaspar, D. Guerin, a Delattre, E. Fortunato, and R. Martins. "{The influence of fibril composition and dimension on the performance of paper gated oxide transistors.}." Nanotechnology. 25 (2014): 094007. AbstractWebsite

Paper electronics is a topic of great interest due the possibility of having low-cost, disposable and recyclable electronic devices. The final goal is to make paper itself an active part of such devices. In this work we present new approaches in the selection of tailored paper, aiming to use it simultaneously as substrate and dielectric in oxide based paper field effect transistors (FETs). From the work performed, it was observed that the gate leakage current in paper FETs can be reduced using a dense microfiber/nanofiber cellulose paper as the dielectric. Also, the stability of these devices against changes in relative humidity is improved. On other hand, if the pH of the microfiber/nanofiber cellulose pulp is modified by the addition of HCl, the saturation mobility of the devices increases up to 16 cm(2) V(-1) s(-1), with an ION/IOFF ratio close to 10(5).

Pereira, L., L. Raniero, P. Barquinha, E. Fortunato, and R. Martins. "{Impedance study of the electrical properties of poly-Si thin film transistors}." Journal of Non-Crystalline Solids. 352 (2006): 1737-1740. AbstractWebsite
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Pereira, L., H. Águas, E. Fortunato, and R. Martins. "{Nanostructure characterization of high k materials by spectroscopic ellipsometry}." Applied Surface Science. 253 (2006): 339-343. AbstractWebsite
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Pereira, L., H. Águas, M. Beckers, R. M. S. Martins, E. Fortunato, and R. Martins. "{Metal contamination detection in nickel induced crystallized silicon by spectroscopic ellipsometry}." Journal of Non-Crystalline Solids. 354 (2008): 2319-2323. AbstractWebsite
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Pereira, L., H. Águas, R. M. S. Martins, P. Vilarinho, E. Fortunato, and R. Martins. "{Polycrystalline silicon obtained by metal induced crystallization using different metals}." Thin Solid Films. 451-452 (2004): 334-339. AbstractWebsite
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Pereira, L., H. Águas, L. Gomes, P. Barquinha, E. Fortunato, and R. Martins. "{Nanostructured Silicon Based Thin Film Transistors Processed in the Plasma Dark Region}." Journal of Nanoscience and Nanotechnology. 10 (2010): 2938-2943. AbstractWebsite
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Pereira, L, Barquinha, P, Fortunato, and E. "{Poly-Si thin film transistors: Effect of metal thickness on silicon crystallization}." 514-516 (2006): 28-32. AbstractWebsite
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