Publications

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2004
Raniero, L, Martins, R, Aguas, and H. "{Growth of polymorphous/nanocrystalline silicon films deposited by PECVD at 13.56 MHz}." 455-456 (2004): 532-535. AbstractWebsite
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Fortunato, E, Pimentel, A, Pereira, and L. "{High field-effect mobility zinc oxide thin film transistors produced at room temperature}." 338 (2004): 806-809. AbstractWebsite
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Aguas, H, Pereira, L, and Raniero. "{MIS photodiodes of polyrnorphous silicon deposited at higher growth rates by 27.12 MHz PECVD discharge}." 455-456 (2004): 73-76. AbstractWebsite
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Pereira, L, Aguas, H, and Raniero. "{Role of substrate on the growth process of polycrystalline silicon thin films by low-pressure chemical vapour deposition}." 455-456 (2004): 112-115. AbstractWebsite
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Silva, M. A. G., A, Raniero, L, Ferreira, and E. "{Silicon etching in CF(4)/O(2) and SF(6) atmospheres}." 455-456 (2004): 120-123. AbstractWebsite
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Pereira, L, Aguas, H, Igreja, and R. "{Sputtering preparation of silicon nitride thin films for gate dielectric applications}." 455-456 (2004): 69-72. AbstractWebsite
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2003
Aguas, H, Pereira, L, Goullet, and A. "{Correlation between the tunnelling oxide and I-V curves of MIS photodiodes}." 762 (2003): 217-222. AbstractWebsite
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Aguas, H, Raniero, L, and Pereira. "{Polymorphous silicon films produced in large area reactors by PECVD at 27.12 MHz and 13.56 MHz}." 762 (2003): 589-594. AbstractWebsite
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Mauricio, RM, Pereira, LGR, Goncalves, and LC. "{Potential of semi-automated in vitro gas production technique for sorghum silages evaluation}." 32 (2003): 1013-1020. AbstractWebsite
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2002
Fortunato, E, Brida, D, Pereira, and L. "{Dependence of the strains and residual mechanical stresses on the performances presented by a-Si : H thin film position sensors}." 4 (2002): 612-616. AbstractWebsite
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Cabrita, A, Pereira, L, Brida, and D. "{Role of the density of states in the colour selection of the collection spectrum of amorphous silicon-based Schottky photodiodes}." 230-2 (2002): 559-562. AbstractWebsite
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Aguas, H, Fortunato, E, Pereira, and L. "{Role of the i-layer thickness in the performance of a-Si : H Schottky barrier photodiodes}." 230-2 (2002): 587-590. AbstractWebsite
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2001
Cabrita, A., L. Pereira, D. Brida, A. Lopes, A. Marques, I. Ferreira, E. Fortunato, and R. Martins. "{Silicon carbide photodiodes: Schottky and PINIP structures}." Applied Surface Science. 184 (2001): 437-442. AbstractWebsite
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