@article {Figueiredo2012,
	title = {{p-Type Cu x O Films Deposited at Room Temperature for Thin-Film Transistors}},
	journal = {Journal of Display Technology},
	volume = {8},
	number = {1},
	year = {2012},
	note = {n/a},
	pages = {41{\textendash}47},
	abstract = {<p>Thin-films of copper oxide @Cu OA were sputtered from a metallic copper (Cu) target and studied as a function of oxygen partial pressure @O??A. A metallic Cu film with cubic structure obtained from 0{\%} O?? has been transformed to cubic CuPO phase for the increase in O?? to 9{\%} but then changed to monoclinic CuO phase (for O?? PS7). The variation in crystallite size (calculated from x-ray diffraction data) was further substantiated by the variation in grain size (surface microstruc- tures). The Cu O films produced with O?? ranging between 9{\%} and 75{\%} showed p-type behavior, which were successfully applied to produce thin-film transistors.</p>
},
	keywords = {copper oxide, CuxO, p-type oxides, sputtering, TFT},
	author = {Figueiredo, V. and Elangovan, E. and Barros, R. and Pinto, JV and Busani, T. and Martins, R. and Fortunato, Elvira}
}
