<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Figueiredo, V.</style></author><author><style face="normal" font="default" size="100%">Elangovan, E.</style></author><author><style face="normal" font="default" size="100%">Barros, R.</style></author><author><style face="normal" font="default" size="100%">Pinto, JV</style></author><author><style face="normal" font="default" size="100%">Busani, T.</style></author><author><style face="normal" font="default" size="100%">Martins, R.</style></author><author><style face="normal" font="default" size="100%">Fortunato, Elvira</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">{p-Type Cu x O Films Deposited at Room Temperature for Thin-Film Transistors}</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Display Technology</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">copper oxide</style></keyword><keyword><style  face="normal" font="default" size="100%">CuxO</style></keyword><keyword><style  face="normal" font="default" size="100%">p-type oxides</style></keyword><keyword><style  face="normal" font="default" size="100%">sputtering</style></keyword><keyword><style  face="normal" font="default" size="100%">TFT</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2012</style></year></dates><number><style face="normal" font="default" size="100%">1</style></number><volume><style face="normal" font="default" size="100%">8</style></volume><pages><style face="normal" font="default" size="100%">41–47</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Thin-films of copper oxide @Cu OA were sputtered from a metallic copper (Cu) target and studied as a function of oxygen partial pressure @O??A. A metallic Cu film with cubic structure obtained from 0{%} O?? has been transformed to cubic CuPO phase for the increase in O?? to 9{%} but then changed to monoclinic CuO phase (for O?? PS7). The variation in crystallite size (calculated from x-ray diffraction data) was further substantiated by the variation in grain size (surface microstruc- tures). The Cu O films produced with O?? ranging between 9{%} and 75{%} showed p-type behavior, which were successfully applied to produce thin-film transistors.&lt;/p&gt;
</style></abstract><notes><style face="normal" font="default" size="100%">n/a</style></notes></record></records></xml>