<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="6.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Figueiredo, V.</style></author><author><style face="normal" font="default" size="100%">Pinto, JV</style></author><author><style face="normal" font="default" size="100%">Deuermeier, J</style></author><author><style face="normal" font="default" size="100%">Barros, R.</style></author><author><style face="normal" font="default" size="100%">E. Alves</style></author><author><style face="normal" font="default" size="100%">Martins, R.</style></author><author><style face="normal" font="default" size="100%">Fortunato, E.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">{p-Type Cu O Thin-Film Transistors Produced by Thermal Oxidation}</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Display Technology</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">copper oxide</style></keyword><keyword><style  face="normal" font="default" size="100%">CuxO</style></keyword><keyword><style  face="normal" font="default" size="100%">p-type oxides</style></keyword><keyword><style  face="normal" font="default" size="100%">TFT</style></keyword><keyword><style  face="normal" font="default" size="100%">thermal oxidation</style></keyword><keyword><style  face="normal" font="default" size="100%">thin film transistors</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2013</style></year></dates><number><style face="normal" font="default" size="100%">9</style></number><volume><style face="normal" font="default" size="100%">9</style></volume><pages><style face="normal" font="default" size="100%">735–740</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Thin-films of copper oxide Cu O were produced by thermal oxidation of metallic copper (Cu) at different tempera- tures (150–450 C). The films produced at temperatures of 200, 250 and 300 C showed high Hall motilities of 2.2, 1.9 and 1.6 cm V s , respectively. Single Cu O phases were obtained at 200 Cand its conversion toCuO starts at 250 C. For lower thick- nesses 40 nm, the films oxidized at 250 Cshowed a complete conversion to CuO phase. Successful thin-film transistors (TFTs) were produce by thermal oxidation of a 20 nm Cu film, obtaining p-type Cu O (at 200 C) and CuO (at 250 C) with On/Off ratios of 6 10 and 1 10 , respectively.&lt;/p&gt;
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