@article {Figueiredo2013,
	title = {{p-Type Cu O Thin-Film Transistors Produced by Thermal Oxidation}},
	journal = {Journal of Display Technology},
	volume = {9},
	number = {9},
	year = {2013},
	note = {n/a},
	pages = {735{\textendash}740},
	abstract = {<p>Thin-films of copper oxide Cu O were produced by thermal oxidation of metallic copper (Cu) at different tempera- tures (150{\textendash}450 C). The films produced at temperatures of 200, 250 and 300 C showed high Hall motilities of 2.2, 1.9 and 1.6 cm V s , respectively. Single Cu O phases were obtained at 200 Cand its conversion toCuO starts at 250 C. For lower thick- nesses 40 nm, the films oxidized at 250 Cshowed a complete conversion to CuO phase. Successful thin-film transistors (TFTs) were produce by thermal oxidation of a 20 nm Cu film, obtaining p-type Cu O (at 200 C) and CuO (at 250 C) with On/Off ratios of 6 10 and 1 10 , respectively.</p>
},
	keywords = {copper oxide, CuxO, p-type oxides, TFT, thermal oxidation, thin film transistors},
	author = {Figueiredo, V. and Pinto, JV and Deuermeier, J and Barros, R. and E. Alves and Martins, R. and Fortunato, E.}
}
