Publications

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Águas, Hugo, Elvira Fortunato, Lu{\'ıs Pereira, V. Silva, and Rodrigo Martins. "Role of the i-Layer Thickness in the Performance of a-Si: H Schottky Barrier Photodiodes." Key Engineering Materials. Vol. 230. Trans Tech Publications, 2002. 587-590. Abstract
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Águas, H., R. Martins, and E. Fortunato. "Plasma diagnostics of a PECVD system using different RF electrode configurations." Vacuum. 56 (2000): 31-37. Abstract
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Aguas, Hugo, Luis Pereira, Daniel Costa, Leandro Raniero, Elvira Fortunato, and Rodrigo Martins. "Role of the Oxide Layer on the Performances of a-Si: H Schottky Structures Applied to PDS Fabrication." MRS Proceedings. Vol. 910. Cambridge University Press, 2006. 0910-A17. Abstract
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Águas, Hugo, Sanjay K. Ram, Andreia Araújo, Diana Gaspar, António Vicente, Sergej A. Filonovich, Elvira Fortunato, Rodrigo Martins, and Isabel Ferreira. "Silicon thin film solar cells on commercial tiles." Energy & Environmental Science. 4 (2011): 4620-4632. Abstract
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Águas, Hugo, Lu{\'ıs Pereira, Isabel Ferreira, A. R. Ramos, A. S. Viana, J. Andreu, Paula M. Vilarinho, Elvira Fortunato, and Rodrigo Martins. "Effect of annealing on gold rectifying contacts in amorphous silicon." Materials Science Forum. Vol. 455. Trans Tech Publications, 2004. 96-99. Abstract
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Águas, Hugo, Lu{\'ıs Pereira, Leandro Raniero, Elvira Fortunato, and Rodrigo Martins. "MIS Photodiodes of Polymorphous Silicon Deposited at Higher Growth Rates by 27.12 MHz PECVD Discharge." Materials Science Forum. Vol. 455. Trans Tech Publications, 2004. 73-76. Abstract
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Aguas, H., R. J. C. Silva, M. Viegas, L. Pereira, E. Fortunato, and R. Martins. "Study of environmental degradation of silver surface." physica status solidi (c). 5 (2008): 1215-1218. Abstract
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Águas, Hugo, Elvira Fortunato, and Rodrigo Martins. "Influence of a DC grid on silane rf plasma properties." Vacuum. 64 (2002): 387-392. Abstract
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Aguas, Hugo, Ana Cabrita, Pedro Tonello, Patricia Nunes, Elvira Fortunato, and Rodrigo Martins. "Two Step Process for the Growth of a Thin Layer of Silicon Dioxide for Tunneling Effect Applications." MRS Proceedings. Vol. 619. Cambridge University Press, 2000. 179. Abstract
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Águas, Hugo, Tiago Mateus, António Vicente, Diana Gaspar, Manuel J. Mendes, Wolfgang A. Schmidt, Lu{\'ıs Pereira, Elvira Fortunato, and Rodrigo Martins. "Thin film silicon photovoltaic cells on paper for flexible indoor applications." Advanced Functional Materials. 25 (2015): 3592-3598. Abstract
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Águas, H., E. Fortunato, V. Silva, L. Pereira, and R. Martins. "High quality a-Si: H films for MIS device applications." Thin solid films. 403 (2002): 26-29. Abstract
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Águas, H., L. Pereira, Raniero L. E. Fortunato, and R. Martins. "Effect of the load resistance in the linearity and sensitivity of MIS position sensitive detectors." MRS Online Proceedings Library Archive. 862 (2005). Abstract
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Águas, H., I. Bernacka-Wojcik, T. Busani, E. Fortunato, R. Martins, P. Lopes, P. Simões, M. Ferreira, and L. Hilliou. "Microplat project: development status." III Annual Meeting of the I3N–Institute of Nanostructures, Nanomodelling and Nanofabrication, 2011. 2011. 9. Abstract
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Águas, H., A. Gonçalves, L. Pereira, R. Silva, E. Fortunato, and R. Martins. "Spectroscopic ellipsometry study of amorphous silicon anodically oxidised." Thin Solid Films. 427 (2003): 345-349. Abstract
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Águas, H., SA Filonovich, I. Bernacka-Wojcik, E. Fortunato, and R. Martins. "Role of trimethylboron to silane ratio on the properties of p-type nanocrystalline silicon thin film deposited by radio frequency plasma enhanced chemical vapour deposition." Journal of nanoscience and nanotechnology. 10 (2010): 2547-2551. Abstract
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Aguas, H., L. Pereira, L. Raniero, E. Fortunato, and R. Martins. "Electronic, Optoelectronic, Spintronic and Ferroelectric Materials-MIS Photodiodes of Polymorphous Silicon Deposited at Higher Growth Rates by 27.12 MHz PECVD Discharge." Materials Science Forum. Vol. 455. Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-, 2004. 73-76. Abstract
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Aguas, Hugo, R. Martins, and E. Fortunato. "Role of ion bombardment on the properties of a-Si: H films." Vacuum. 60 (2001): 247-254. Abstract
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Aguas, H., L. Raniero, L. Pereira, A. S. Viana, E. Fortunato, and R. Martins. "Role of the rf frequency on the structure and composition of polymorphous silicon films." Journal of non-crystalline solids. 338 (2004): 183-187. Abstract
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Araújo, Andreia, Manuel J. Mendes, Tiago Mateus, António Vicente, Daniela Nunes, Tomas Calmeiro, Elvira Fortunato, Hugo Águas, and Rodrigo Martins. "Influence of the substrate on the morphology of self-assembled silver nanoparticles by rapid thermal annealing." The Journal of Physical Chemistry C. 120 (2016): 18235-18242. Abstract
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Araújo, Andreia, Raquel Barros, Tiago Mateus, Diana Gaspar, Nuno Neves, António Vicente, Sergej A. Filonovich, Pedro Barquinha, Elvira Fortunato, Ana M. Ferraria, and others. "Role of a disperse carbon interlayer on the performances of tandem a-Si solar cells." Science and Technology of Advanced Materials. 14 (2013): 045009. Abstract
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Araújo, Andreia, Ana Pimentel, Maria João Oliveira, Manuel J. Mendes, Ricardo Franco, Elvira Fortunato, Hugo Águas, and Rodrigo Martins. "Direct growth of plasmonic nanorod forests on paper substrates for low-cost flexible 3D SERS platforms." Flexible and Printed Electronics. 2 (2017): 014001. Abstract
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Araújo, Andreia, Carlos Caro, Manuel J. Mendes, Daniela Nunes, Elvira Fortunato, Ricardo Franco, Hugo Águas, and Rodrigo Martins. "Highly efficient nanoplasmonic SERS on cardboard packaging substrates." Nanotechnology. 25 (2014): 415202. Abstract
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Assunção, Vitor, Elvira Fortunato, António Marques, Alexandra Gonçalves, Isabel Ferreira, Hugo Águas, and Rodrigo Martins. "New challenges on gallium-doped zinc oxide films prepared by rf magnetron sputtering." Thin Solid Films. 442 (2003): 102-106. Abstract
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Assuncao, V., E. Fortunato, A. Marques, H. Aguas, I. Ferreira, M. E. V. Costa, and R. Martins. "Influence of the deposition pressure on the properties of transparent and conductive ZnO: Ga thin-film produced by rf sputtering at room temperature." Thin Solid Films. 427 (2003): 401-405. Abstract
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