MIS Photodiodes of Polymorphous Silicon Deposited at Higher Growth Rates by 27.12 MHz PECVD Discharge | Hugo Águas

MIS Photodiodes of Polymorphous Silicon Deposited at Higher Growth Rates by 27.12 MHz PECVD Discharge

Citation:: Águas, Hugo, Lu{\'ıs Pereira, Leandro Raniero, Elvira Fortunato, and Rodrigo Martins. "MIS Photodiodes of Polymorphous Silicon Deposited at Higher Growth Rates by 27.12 MHz PECVD Discharge." Materials Science Forum. Vol. 455. Trans Tech Publications, 2004. 73-76.

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